Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN

Horng, Ray-Hua; Wuu, Dong-Sing; Lien, Yi-Chung; Lan, Wen-How
October 2001
Applied Physics Letters;10/29/2001, Vol. 79 Issue 18, p2925
Academic Journal
The characteristics of Ni/indium tin oxide (ITO) ohmic contacts to p-type GaN (∼2×10[sup 17] cm[sup -3]) have been studied. The Ni/ITO (10 nm/250 nm) layers were prepared by thermal evaporation and rf magnetron sputtering, respectively. Although the as-deposited Ni/ITO contacts present rectified behavior, the linear current–voltage characteristics can be obtained. The contact resistance can be reduced significantly for the ITO/Ni/p-GaN samples after suitable rapid thermal process. The contact property of ITO/Ni/p-GaN shows lowest specific contact resistivity of 8.6×10[sup -4] Ω cm[sup 2] and high transparency (above 80% for 450–550 nm) as the sample annealed at 600 °C in air. Possible mechanisms for the observed low contact resistance and high transparency will be discussed. The present process is compatible with the fabrication for the high-efficient GaN light-emitting devices. © 2001 American Institute of Physics.


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