Thermally induced Zr incorporation into Si from zirconium silicate thin films

Quevedo-Lopez, M.; El-Bouanani, M.; Addepalli, S.; Duggan, J. L.; Gnade, B. E.; Wallace, R. M.; Visokay, M. R.; Douglas, M.; Bevan, M. J.; Colombo, L.
October 2001
Applied Physics Letters;10/29/2001, Vol. 79 Issue 18, p2958
Academic Journal
Monochromatic x-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and Rutherford backscattering spectrometry are used to study the outdiffusion of Zr from the alternate gate dielectric candidate ZrSi[sub x]O[sub y] thin films deposited on Si(100). We find that Zr incorporation into Si from ZrSi[sub x]O[sub y] appears to occur at annealing temperatures higher than 1000 °C. Incorporation of Zr to depths of up to 23 nm into the silicon substrate is observed. A diffusion coefficient of D[sub 0]∼2×10[sup -15] cm[sup 2]/s is estimated from the associated depth profiles. © 2001 American Institute of Physics.


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