Light-emitting nanostructures formed by intense, ultrafast electronic excitation in silicon (100)

Hamza, Alex V.; Newman, Micheal W.; Thielen, Peter A.; Lee, Howard W. H.; Schenkel, Thomas; McDonald, Joseph W.; Schneider, Dieter H.
October 2001
Applied Physics Letters;10/29/2001, Vol. 79 Issue 18, p2973
Academic Journal
The intense, ultrafast electronic excitation of clean silicon (100)–(2×1) surfaces leads to the formation of silicon nanostructures embedded in silicon, which photoluminescence at ∼560 nm wavelength (∼2 eV band gap). The silicon surfaces were irradiated with slow, highly charged ions (e.g., Xe[sup 44+] and Au[sup 53+]) to produce the electronic excitation. The observation of excitonic features in the luminescence is particularly unusual for silicon nanostructures. The temperature dependence and the measurement of the triplet–singlet splitting of the emission strongly support the excitonic assignment. © 2001 American Institute of Physics.


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