Two-dimensional simulation of polymer field-effect transistor

Tessler, N.; Roichman, Y.
October 2001
Applied Physics Letters;10/29/2001, Vol. 79 Issue 18, p2987
Academic Journal
A two-dimensional simulation of intrinsic top-contact field-effect transistor is presented. The simulated structure is unique to organic transistors and hence is most relevant. By time resolving the operation of such a transistor, the mechanisms underlying its operation are resolved. The effect of this device configuration on the measured “intrinsic” material properties is also discussed and shown to explain previously reported features. © 2001 American Institute of Physics.


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