TITLE

High-resolution x-ray diffraction, x-ray standing-wave, and transmission electron microscopy study of Sb-based single-quantum-well structures

AUTHOR(S)
Mukhamedzhanov, E. Kh.; Bocchi, C.; Franchi, S.; Baraldi, A.; Magnanini, R.; Nasi, L.
PUB. DATE
May 2000
SOURCE
Journal of Applied Physics;5/1/2000, Vol. 87 Issue 9, p4234
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ga[sub 0.6]Al[sub 0.4]Sb/GaSb single-quantum-well structures grown by molecular-beam epitaxy on GaSb substrates with different well thicknesses, have been studied by high-resolution x-ray diffraction and x-ray standing-wave methods. By fitting the diffraction curves, thickness, composition, and the static Debye–Waller factor were obtained for each layer of the structures. The analysis of the angular dependence of the yield of photoelectrons emitted by the x-ray standing-wave field in the range of the dynamical x-ray diffraction was used for selecting the most appropriate set of layer parameters among those which gave virtually identical fittings of the diffraction curves. Relatively broadened GaAlSb/GaSb interfaces were found in all of the samples. This result was confirmed by high-resolution transmission electron microscopy investigation of one of the samples. The effect of the surface degradation due to the chemical reaction with the atmosphere of the free surface of the upper Ga[sub 0.6]Al[sub 0.4]Sb layer was considered. © 2000 American Institute of Physics.
ACCESSION #
5401629

 

Related Articles

  • X-ray characterization of GaN/AlGaN multiple quantum wells for ultraviolet laser diodes. Korakakis, D.; Ludwig, K. F.; Moustakas, T. D. // Applied Physics Letters;3/2/1998, Vol. 72 Issue 9, p1004 

    GaN/Al[sub 0.20]Ga[sub 0.80]N (50 Ã…/50 Ã…) multiple quantum wells (MQW) with 15 periods were grown on (0001) sapphire substrates by molecular beam epitaxy and evaluated by x-ray diffraction. To simulate an ultraviolet laser diode structure, the substrate was coated first with n-GaN as the...

  • Molecular beam epitaxy of GaPN, GaPAsN, and InGaPN nitride solid solutions. Lazarenko, A.; Nikitina, E.; Pirogov, E.; Sobolev, M.; Egorov, A. // Semiconductors;Mar2014, Vol. 48 Issue 3, p392 

    Experimental samples of semiconductor heterostructures with GaPN layers and GaPN and GaPNAs quantum wells are synthesized by molecular beam epitaxy on GaP (001) substrates. The structural properties of the samples are investigated by X-ray diffraction and the molar fraction x of nitrogen in the...

  • Structural and optical characterization of nonpolar GaN/AlN quantum wells. Ng, H. M.; Bell, A.; Ponce, F. A.; Chu, S. N. G. // Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p653 

    We have grown nonpolar GaN/AlN multiple quantum wells by plasma-assisted molecular-beam epitaxy on R-plane sapphire substrates. X-ray diffraction and selected-area diffraction data show that the III-nitride epilayers are oriented in the [11 2 ‾0] direction with the [0001] axis lying in the...

  • Effects of growth temperature on the structural and optical properties of 1.55 μm GaInNAsSb quantum wells grown on GaAs. Bank, Seth R.; Yuen, Homan B.; Wistey, Mark A.; Lordi, Vincenzo; Bae, Hopil P.; Harris Jr., James S. // Applied Physics Letters;7/11/2005, Vol. 87 Issue 2, p021908 

    We investigate the effects of growth temperature on the structural and optical properties of GaInNAsSb single quantum wells grown by molecular beam epitaxy. Peak room-temperature photoluminescence occurred at 1.65 μm as-grown and at 1.55 μm under optimal annealing conditions. Excellent...

  • Critical thickness and lattice relaxation of Mg-rich strained Mg0.37Zn0.63O (0001) layers towards multi-quantum-wells. Matsui, Hiroaki; Tabata, Hitoshi; Hasuike, Noriyuki; Harima, Hiroshi // Journal of Applied Physics;1/15/2006, Vol. 99 Issue 2, p024902 

    The heteroepitaxy of Mg-rich Mg0.37Zn0.63O layers on ZnO (0001) substrates was carried out using laser molecular-beam epitaxy. Mg0.37Zn0.63O layers changed from a two-dimensional (2D) to three-dimensional growth mode at a layer thickness (tc) between 38 and 100 nm through lattice-strain...

  • High resolution x-ray diffraction analysis of InGaAs/InP superlattices. Cornet, D. M.; LaPierre, R. R.; Comedi, D.; Pusep, Y. A. // Journal of Applied Physics;8/15/2006, Vol. 100 Issue 4, p043518 

    The interfacial properties of lattice-matched InGaAs/InP superlattice (SL) structures grown by gas source molecular beam epitaxy were investigated by high resolution x-ray diffraction (HRXRD). SLs with various periods were grown to determine the contributions of the interface layers to the...

  • Nitrogen incorporation in GaNAs layers grown by molecular beam epitaxy. Zhao, Q. X.; Wang, S. M.; Sadeghi, M.; Larsson, A.; Friesel, M.; Willander, M. // Applied Physics Letters;7/17/2006, Vol. 89 Issue 3, p031907 

    GaNAs/GaAs quantum wells with high N concentrations, grown by molecular beam epitaxy, have been investigated by secondary-ion mass spectrometry (SIMS), high resolution x-ray diffraction (XRD), and photoluminescence (PL) measurements. The substitutional N concentration in an 18 nm thick strained...

  • Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells. Nair, Hari P.; Crook, Adam M.; Yu, Kin M.; Bank, Seth R. // Applied Physics Letters;1/9/2012, Vol. 100 Issue 2, p021103 

    We investigate the incorporation of nitrogen into (Ga,In)Sb grown on GaSb and report room temperature photoluminescence from GaInSb(N) quantum wells. X-ray diffraction and channeling nuclear reaction analysis, together with Rutherford backscattering, were employed to identify the optimal...

  • Strain-compensated InGaAsSb/AlGaAsSb mid-infrared quantum-well lasers. Li, W.; Héroux, J. B.; Shao, H.; Wang, W. I. // Applied Physics Letters;3/22/2004, Vol. 84 Issue 12, p2016 

    The use of strain-compensated InGaAsSb/AlGaAsSb quantum wells for the fabrication of type I mid-infrared laser devices grown on GaSb substrates by molecular-beam epitaxy is reported. The creation of a tensile strain in the Al[sub 0.25]Ga[sub 0.75]As[sub y]Sb[sub 1-y] barriers by the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics