TITLE

Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

AUTHOR(S)
Visalli, Domenica; Van Hove, Marleen; Srivastava, Puneet; Derluyn, Joff; Das, Johan; Leys, Maarten; Degroote, Stefan; Kai Cheng; Germain, Marianne; Borghs, Gustaaf
PUB. DATE
September 2010
SOURCE
Applied Physics Letters;9/13/2010, Vol. 97 Issue 11, p113501
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The breakdown mechanism in GaN-based heterostructures (HFETs) grown on silicon substrate is investigated in detail by TCAD simulations and silicon substrate removal technique. High-voltage electrical measurements show that the breakdown voltage saturates for larger gate-drain distances. This failure mechanism is dominated by the avalanche breakdown in the Si substrate. High-voltage TCAD simulations of AlGaN/GaN/Si substrate structures show higher impact ionization factor and electron density at the Si interface indicating a leakage current path where avalanche breakdown occurs. Experimentally, by etching off the Si substrate the breakdown voltage no longer saturates and linearly increases for all gate-drain gaps. We propose the silicon removal technique as a viable way to enhance the breakdown voltage of AlGaN/GaN devices grown on Si substrate.
ACCESSION #
53768709

 

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