Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

Visalli, Domenica; Van Hove, Marleen; Srivastava, Puneet; Derluyn, Joff; Das, Johan; Leys, Maarten; Degroote, Stefan; Kai Cheng; Germain, Marianne; Borghs, Gustaaf
September 2010
Applied Physics Letters;9/13/2010, Vol. 97 Issue 11, p113501
Academic Journal
The breakdown mechanism in GaN-based heterostructures (HFETs) grown on silicon substrate is investigated in detail by TCAD simulations and silicon substrate removal technique. High-voltage electrical measurements show that the breakdown voltage saturates for larger gate-drain distances. This failure mechanism is dominated by the avalanche breakdown in the Si substrate. High-voltage TCAD simulations of AlGaN/GaN/Si substrate structures show higher impact ionization factor and electron density at the Si interface indicating a leakage current path where avalanche breakdown occurs. Experimentally, by etching off the Si substrate the breakdown voltage no longer saturates and linearly increases for all gate-drain gaps. We propose the silicon removal technique as a viable way to enhance the breakdown voltage of AlGaN/GaN devices grown on Si substrate.


Related Articles

  • Accumulation hole layer in p-GaN/AlGaN heterostructures. Shur, M. S.; Shur, M.S.; Bykhovski, A. D.; Bykhovski, A.D.; Gaska, R.; Yang, J. W.; Yang, J.W.; Simin, G.; Khan, M. A.; Khan, M.A. // Applied Physics Letters;5/22/2000, Vol. 76 Issue 21 

    We present the results on piezoelectric and pyroelectric doping in AlGaN-on-GaN and GaN-on-AlGaN heterostructures and demonstrate p-GaN/AlGaN structures with accumulation hole layer. Our results indicate that polarization charge can induce up to 5x10[sup 13] cm[sup -2] holes at the AlGaN/GaN...

  • Comment on “Piezoelectric effect on Al[sub 0.35-δ]In[sub δ]Ga[sub 0.65]N/GaN heterostructures” [Appl. Phys. Lett. 80, 2684 (2002)]. Tang, N.; Shen, B.; Zheng, Z.W.; Chen, D.J.; Tao, C.M.; Zhang, R.; Shi, Y.; Zheng, Y.D. // Applied Physics Letters;2/23/2004, Vol. 84 Issue 8, p1425 

    Comments on J.K. Lao and colleagues' article 'Piezoelectric Effect on AlInGaN/GaN Heterostructures.' Effect of a small fraction of In atoms in AlInGaN/GaN on the piezoelectric field at the interface; Schematic illustration of the band structure in the triangular potential quantum well; Origin...

  • Ballistic transport in GaN/AlGaN resonant tunneling diodes. Sakr, S.; Warde, E.; Tchernycheva, M.; Julien, F. H. // Journal of Applied Physics;Jan2011, Vol. 109 Issue 2, p023717 

    In this work we theoretically study the vertical transport in GaN/AlGaN resonant tunneling diodes in the ballistic regime. Heterostructures based on III-nitride compounds are characterized by a large conduction band discontinuity and a presence of an internal electric field, both of which have...

  • Photoexcited carrier dynamics in AlInN/GaN heterostructures. Liuolia, V.; Marcinkevicˇius, S.; Billingsley, D.; Shatalov, M.; Yang, J.; Gaska, R.; Shur, M. S. // Applied Physics Letters;6/11/2012, Vol. 100 Issue 24, p242104 

    Photoexcited carrier dynamics and localization potentials in Al0.86In0.14N/GaN heterostructures have been examined by time-resolved and scanning near-field photoluminescence (PL) spectroscopy. The large GaN and AlInN PL intensity difference, and the short AlInN PL decay and GaN PL rise times...

  • Contactless electroreflectance evidence for reduction in the surface potential barrier in AlGaN/GaN heterostructures passivated by SiN layer. Kudrawiec, R.; Paszkiewicz, B.; Motyka, M.; Misiewicz, J.; Derluyn, J.; Lorenz, A.; Cheng, K.; Das, J.; Germain, M. // Journal of Applied Physics;Nov2008, Vol. 104 Issue 9, p096108 

    Contactless electroreflectance (CER) has been applied to study the AlGaN potential-barrier height in AlGaN/GaN heterostructures without and with a SiN passivation layer. In the case of an unpassivated structure, an AlGaN band-edge signal with a strong Franz–Keldysh oscillation (FKO) was...

  • Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures. Keller, S.; Suh, C. S.; Fichtenbaum, N. A.; Furukawa, M.; Chu, R.; Chen, Z.; Vijayraghavan, K.; Rajan, S.; DenBaars, S. P.; Speck, J. S.; Mishra, U. K. // Journal of Applied Physics;Nov2008, Vol. 104 Issue 9, p093510 

    Smooth N-polar InGaN/GaN and AlGaN/GaN multiquantum wells (MQWs) and heterostructures were grown by metal organic chemical vapor deposition on (0001) sapphire substrates with misorientation angles of 2°–5° toward the a-sapphire plane. For all investigated structures the tendency...

  • Thermal stability of GaN thin films grown on (0001) Al2O3, (0112) Al2O3 and (0001)Si 6H-SiC substrates. Sun, C. J.; Kung, P.; Saxler, A.; Ohsato, H.; Bigan, E.; Razeghi, M.; Gaskill, D. K. // Journal of Applied Physics;7/1/1994, Vol. 76 Issue 1, p236 

    Presents a study which examined the thermal stability of gallium nitride thin films grown on (001) aluminum[sub2]oxygen[sub3] and (0001)[subsilicon] 6 hydrogen-silicon carbide substrates. Experimental method; Results; Discussion.

  • Coupling in concentric double quantum rings. Mühle, A.; Wegscheider, W.; Haug, R. J. // Applied Physics Letters;9/24/2007, Vol. 91 Issue 13, p133116 

    We designed a device consisting of two concentric quantum rings in a GaAs/AlGaAs heterostructure. The outer ring is connected to leads while the inner ring is only capacitively coupled to the rest of the system. Measuring electronic transport in a regime with strong coupling to the leads we...

  • Aluminum and GaN contacts on Si(111) and sapphire. Zhao, Z. M.; Zhao, Z.M.; Jiang, R. L.; Jiang, R.L.; Chen, P.; Li, W. P.; Li, W.P.; Xi, D. J.; Xi, J.; Xie, S. Y.; Xie, S.Y.; Shen, B.; Zhang, R.; Zheng, Y. D.; Zheng, Y.D. // Applied Physics Letters;11/13/2000, Vol. 77 Issue 20 

    Al and GaN contacts on both Si(111) and sapphire substrates were studied in this letter. After annealing at 450, 520, 600, and 650 °C for 35 min under a N[sub 2] flowing ambient, the current-voltage characteristics of Al/GaN contacts on Si(111) substrates were different from those on sapphire...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics