TITLE

Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers

AUTHOR(S)
Jing Zhang; Hongping Zhao; Tansu, Nelson
PUB. DATE
September 2010
SOURCE
Applied Physics Letters;9/13/2010, Vol. 97 Issue 11, p111105
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The optical gain characteristics of high Al-content AlGaN quantum wells (QWs) are analyzed for deep UV lasers. The effect of crystal-field split-off hole (CH) and heavy-hole (HH) bands crossover on the gain characteristics of AlGaN QW with AlN barriers is analyzed. Attributing to the strong transition between conduction–CH bands, the TM spontaneous emission recombination rate is enhanced significantly for high Al-content AlGaN QWs. Large TM-polarized material gain is shown as achievable for high Al-content AlGaN QWs, which indicates the feasibility of TM lasing for lasers emitting at ∼220–230 nm.
ACCESSION #
53768705

 

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