Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

Te-Chih Chen; Ting-Chang Chang; Chih-Tsung Tsai; Tien-Yu Hsieh; Shih-Ching Chen; Chia-Sheng Lin; Ming-Chin Hung; Chun-Hao Tu; Jiun-Jye Chang; Po-Lun Chen
September 2010
Applied Physics Letters;9/13/2010, Vol. 97 Issue 11, p112104
Academic Journal
In this letter, we investigate the impact of the light illumination on the stability of indium–gallium–zinc oxide thin film transistors under positive gate-bias stress. The noticeable decrease in threshold voltage (Vt) shift more than 5.5 V under illuminated positive gate-bias stress indicates a superior reliability in contrast with the dark stress. The accelerated Vt recovery characteristic compared with dark recovery demonstrates that the charge detrapping effect was enhanced under illumination. Furthermore, the average effective energy barrier of charge trapping and detrapping was derived to verify that illumination can excite the trapped charges and accelerate the charge detrapping process.


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