Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress

Ghaffarzadeh, Khashayar; Nathan, Arokia; Robertson, John; Sangwook Kim; Sanghun Jeon; Changjung Kim; U-In Chung; Je-Hun Lee
September 2010
Applied Physics Letters;9/13/2010, Vol. 97 Issue 11, p113504
Academic Journal
Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (ΔVT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths.


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