TITLE

Effects of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and thermal annealing on 1.3 μm GaInAsN/GaAs quantum well structures

AUTHOR(S)
Polojärvi, V.; Salmi, J.; Schramm, A.; Tukiainen, A.; Guina, M.; Pakarinen, J.; Arola, E.; Læng, J.; Väyrynen, I. J.; Laukkanen, P.
PUB. DATE
September 2010
SOURCE
Applied Physics Letters;9/13/2010, Vol. 97 Issue 11, p111109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the influence of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and subsequent rapid thermal annealing, on optical properties of GaInAsN/GaAs quantum-well (QW) structures. We observed an increase in QW photoluminescence (PL) emission for the (NH4)2S treated samples as compared to the untreated sample. After annealing, also the NH4OH treated sample showed significant improvement in PL. The treatments were also found to decrease the In out-diffusion and reduce the blueshift upon annealing. The PL results are discussed with x-ray diffraction and x-ray photoemission data from SiO2/GaAs, in particular, with changes found in Ga 3d spectra.
ACCESSION #
53768687

 

Related Articles

  • Annealing of the deep recombination center in GaInP/AlGaInP quantum wells grown by solid-source... Dekker, J.; Tukiainen, A. // Journal of Applied Physics;10/1/1999, Vol. 86 Issue 7, p3709 

    Presents information on a study which examined the effect of rapid thermal annealing on bulk gallium-indium phosphide (GaInP)/aluminum-GaInP quantum wells grown by solid source molecular beam epitaxy using time resolved photoluminescence. Experimental procedure and results; Equations for the...

  • Cathodoluminescence investigations of GaInNAs on GaAs(111)B. Miguel-Sánchez, J.; Jahn, U.; Guzmán, A.; Muñoz, E. // Applied Physics Letters;12/4/2006, Vol. 89 Issue 23, p231901 

    In this work, we present a detailed cathodoluminescence characterization of GaInNAs quantum wells grown on GaAs(111)B. As-grown and annealed InGaAs and GaInNAs quantum wells were maeasured and compared by spatially resolved cathodoluminescence at different photon energies. In the case of GaInNAs...

  • Explanation of annealing-induced blueshift of the optical transitions in GaInAsN/GaAs quantum wells. Kudrawiec, R.; S&ecedil;k, G.; Misiewicz, J.; Gollub, D.; Forchel, A. // Applied Physics Letters;10/6/2003, Vol. 83 Issue 14, p2772 

    This letter aims to describe the effect of rapid thermal annealing on a Ga[sub 0.64]In[sub 0.36]As[sub 0.99]N[sub 0.01]/GaAs single quantum well grown by molecular-beam epitaxy. This effect was investigated using both photoluminescence and photoreflectance. A blueshift of optical transitions and...

  • Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars. Chern, G. D.; Tureci, H. F.; Stone, A. Douglas; Chang, R. K.; Kneissi, M.; Johnson, N. M. // Applied Physics Letters;9/1/2003, Vol. 83 Issue 9, p1710 

    We report unidirectional emission from lasing in In[sub 0.09]Ga[sub 0.91]N/In[sub 0.01]Ga[sub 0.99]N multiple-quantum-well spiral micropillars. Our imaging technique shows that the maximum emission comes from the notch of the spiral microcavities at an angle about 40° from the normal of the...

  • Investigation of indium doping in InGaAs/GaAs/AlGaAs graded-index separated confinement heterostructure lasers. Tsang, J. S.; Lee, C. P.; Liu, D. C.; Chen, H. R.; Tsai, K. L.; Tsai, C. M. // Journal of Applied Physics;10/15/1993, Vol. 74 Issue 8, p4882 

    Presents a study that examined the effect of indium doping in the graded-index regions of the indium (In)-gallium (Ga)-arsenic (As)/GaAs/aluminum-Ga-As graded-index separated confinement heterostructure quantum well laser. Effect of thermal treatment on laser performance; Importance of...

  • Interband tunneling between valence-band and conduction-band quantum wells in a GaSb/AlSb/InAs/AlSb/GaSb/AlSb/InAs triple-barrier structure. Chen, J. F.; Cho, A. Y. // Journal of Applied Physics;8/1/1992, Vol. 72 Issue 3, p960 

    Presents a study that examined an interband tunneling effect between gallium-antimony (GaSb) valence-band and indium-arsenic conduction-band quantum wells in a triple-barrier interband tunneling (TBIT) device. Diagram of a TBIT structure under flatband conditions; Information on the...

  • Ternary mixed crystal effect on electron mobility in a strained wurtzite AlN/GaN/AlN quantum well with an InxGa1-xN nanogroove. Qu, Y.; Ban, S. L. // Journal of Applied Physics;Jul2011, Vol. 110 Issue 1, p013722 

    Based on the dielectric continuum phonon model, uniaxial model and force balance equation, the influence of an InxGa1-xN nanogroove inserted in a strained wurtzite AlN/GaN/AlN quantum well on electron mobility is studied. The results show that the optical phonon modes will be changed by the...

  • Gain measurements in InGaAsP multiquantum well lasers. Dutta, N. K.; Craft, D. C.; Napholtz, S. G. // Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p123 

    This letter reports the polarization dependence and temperature dependence of gain spectrum in InGaAsP multiquantum well (MQW) lasers emitting at 13 μm. The gain of the TE mode is larger (by ∼40 cm-1) than that of the TM mode. The peak gain for the TM mode is shifted towards shorter...

  • Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells. da Cunha, J. F. R.; da Silva, S. W.; Morais, P. C.; Lamas, T. E.; Quivy, A. A. // Journal of Applied Physics;8/15/2007, Vol. 102 Issue 4, p043704 

    The effects of optically exciting n-type and p-type one-side modulation-doped InGaAs/GaAs quantum well structures were investigated by scanning the photoluminescence intensity profile on the sample’s surface. An undoped quantum well was used as reference. Photoluminescence and carrier...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics