Effects of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and thermal annealing on 1.3 μm GaInAsN/GaAs quantum well structures

Polojärvi, V.; Salmi, J.; Schramm, A.; Tukiainen, A.; Guina, M.; Pakarinen, J.; Arola, E.; Læng, J.; Väyrynen, I. J.; Laukkanen, P.
September 2010
Applied Physics Letters;9/13/2010, Vol. 97 Issue 11, p111109
Academic Journal
We report the influence of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and subsequent rapid thermal annealing, on optical properties of GaInAsN/GaAs quantum-well (QW) structures. We observed an increase in QW photoluminescence (PL) emission for the (NH4)2S treated samples as compared to the untreated sample. After annealing, also the NH4OH treated sample showed significant improvement in PL. The treatments were also found to decrease the In out-diffusion and reduce the blueshift upon annealing. The PL results are discussed with x-ray diffraction and x-ray photoemission data from SiO2/GaAs, in particular, with changes found in Ga 3d spectra.


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