λ∼3.36 μm room temperature InGaAs/AlAs(Sb) quantum cascade lasers with third order distributed feedback grating

Commin, J. P.; Kennedy, K.; Revin, D. G.; Zhang, S. Y.; Krysa, A. B.; Cockburn, J. W.
September 2010
Applied Physics Letters;9/13/2010, Vol. 97 Issue 11, p111113
Academic Journal
We report on the development of strain compensated InGaAs/AlAs(Sb) quantum cascade lasers, incorporating a buried third order distributed feedback grating. Single mode operation with a side mode suppression ratio of ∼30 dB has been achieved in the wavelength range of 3.358–3.380 μm for temperatures between 270 and 360 K. The threefold increase in grating pitch size, compared with a first order grating, allows conventional photolithographic techniques to be used for single mode laser fabrication.


Related Articles

  • Effect of Auger recombination on the performance of p-doped quantum dot lasers. Mokkapati, S.; Buda, M.; Tan, H. H.; Jagadish, C. // Applied Physics Letters;4/17/2006, Vol. 88 Issue 16, p161121 

    Experimental results on spontaneous emission rates from InGaAs quantum dot lasers that can be explained theoretically by considering the influence of nonradiative mixed state recombinations in the quantum dot-wetting layer system are presented. Our model qualitatively explains the experimental...

  • Threshold Characteristics of ? = 1.55�m InGaAsP/InP Heterolasers. Zegrya, G. G.; Pikhtin, N. A.; Skrynnikov, G. V.; Slipchenko, S. O.; Tarasov, I. S. // Semiconductors;Aug2001, Vol. 35 Issue 8, p962 

    Temperature dependences of the threshold characteristics of InGaAsP/InP quantum well (QW) lasers have been studied. The main contribution to the threshold current is made by the thresholdless Auger recombination. The observed power-law temperature dependence of the threshold current is explained...

  • Lasing characteristics of 0.8-μm InGaAsP/GaAs lasers fabricated by wet chemical etching. Ishikawa, Joji; Ito, Toshio; Oh-iso, Yoshitaka; Yamamoto, Masahiro; Takahashi, N. Shin-ichi; Kurita, Shoichi // Journal of Applied Physics;5/15/1989, Vol. 65 Issue 10, p3767 

    Presents a study which demonstrated a fabrication method and lasing characteristics of indium gallium arsenic phosphide/gallium arsenide etched-mirror lasers using a two-step facet chemical etching procedure. Details of the fabrication process; Discussion of the etching profiles and the lasing...

  • (In)GaAsN-based type-II “W” quantum-well lasers for emission at λ=1.55 μm. Vurgaftman, I.; Meyer, J.R.; Tansu, N.; Mawst, L.J. // Applied Physics Letters;10/6/2003, Vol. 83 Issue 14, p2742 

    Whereas laser emission at 1.55 μm is difficult to realize using type-I InGaAsN quantum wells grown on GaAs, we show that it can be achieved with far fewer restrictions on the growth by employing type-II (In)GaAsN/GaAsSb/(In)GaAsN/GaAs structures having a “W” band alignment. We use...

  • Long wavelength emission in In[sub x]Ga[sub 1-x]As quantum dot structures grown in a GaAs barrier by metalorganic chemical vapor deposition. Passaseo, A.; Tasco, V.; De Giorgi, M.; Todaro, M.T.; De Vittorio, M.; Cingolani, R. // Applied Physics Letters;3/15/2004, Vol. 84 Issue 11, p1868 

    We demonstrate a method to obtain room temperature long wavelength emission from InGaAs quantum dots (QDs) growth directly into a binary GaAs matrix. The wavelength is tuned from 1.26 up to 1.33 μm by varying the V/III ratio during growth of the GaAs cap layer, without using a seeding layer...

  • Cavity length dependence of the wavelength of strained-layer InGaAs/GaAs lasers. Chen, T. R.; Zhuang, Y. H.; Eng, L. E.; Yariv, A. // Applied Physics Letters;12/3/1990, Vol. 57 Issue 23, p2402 

    The lasing wavelength of a strained-layer InGaAs/GaAs single quantum well laser has been found to depend strongly on the cavity length. The relationship between the lasing wavelength and the cavity length was established experimentally and a cavity length tuning mechanism for a quantum well...

  • Dependence of threshold current density on quantum well composition for strained-layer InGaAs-GaAs lasers by metalorganic chemical vapor deposition. Beernink, K. J.; York, P. K.; Coleman, J. J. // Applied Physics Letters;12/18/1989, Vol. 55 Issue 25, p2585 

    A series of separate confinement InxGa1-xAs-GaAs (0.08

  • Coupled resonator vertical-cavity laser diode. Fischer, A.J.; Choquette, K.D.; Chow, W.W.; Hou, H.Q.; Geib, K.M. // Applied Physics Letters;11/8/1999, Vol. 75 Issue 19, p3020 

    Reports on the operation of an electrically injected monolithic coupled resonator vertical cavity laser which consists of an active cavity containing In[sub x]Ga[sub 1-x]As quantum wells optically coupled to a passive GaAs cavity. Modulation characteristics demonstrated by the device arising...

  • Strained single quantum well InGaAs lasers with a threshold current of 0.25 mA. Chen, T.R.; Eng, L.E. // Applied Physics Letters;11/8/1993, Vol. 63 Issue 19, p2621 

    Examines the strained single quantum well indium gallium arsenide (InGaAs) lasers with a threshold current of 0.25 milliamperes. Comparison between InGaAs/aluminum GaAs laser and single quantum well lasers; Dependence of the threshold current on cavity length; Description of the fabrication...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics