Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure

Cheng, H.; Kurdak, Ç.; Leach, J. H.; Wu, M.; Morkoç, H.
September 2010
Applied Physics Letters;9/13/2010, Vol. 97 Issue 11, p112113
Academic Journal
Magnetotransport measurements on an In0.16Al0.84N/AlN/GaN gated Hall bar sample have been performed at 0.28 K. By the application of a gate voltage we were able to vary the total two-dimensional electron gas density from 1.83×1013 to 2.32×1013 cm-2. Two frequency Shubnikov–de Haas oscillations indicate occupation of two subbands by electrons. The density of electrons in the first and second sublevels are found to increase linearly with gate voltage with a slope of 2.01×1012 cm-2/V and 0.47×1012 cm-2/V, respectively. And the quantum lifetimes for the first and second subbands ranged from 0.55 to 0.95×10-13 s and from 1.2 to 2.1×10-13 s.


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