TITLE

Strain-induced channel waveguiding in bulk sapphire substrates

AUTHOR(S)
Liu, Mingjiao; Kim, Hong Koo
PUB. DATE
October 2001
SOURCE
Applied Physics Letters;10/22/2001, Vol. 79 Issue 17, p2693
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the two-dimensional confinement of light in the channel region of a bulk sapphire substrate, which was formed by utilizing the photoelastic effect in sapphire induced by a sputter-deposited SiO[sub 2] film. The experimental result, combined with the simulation results, shows that the sputter-deposited SiO[sub 2] films are compressively stressed up to 10 GPa level and that a 1.0-μm-thick film, for example, induces an index change of 5×10[sup -3] in sapphire in the vertical direction. This amount of index change is found sufficient to support a fundamental mode at wavelengths of 1.54 μm or below. © 2001 American Institute of Physics.
ACCESSION #
5356376

 

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