TITLE

Distinguishing surface and bulk contributions to third-harmonic generation in silicon

AUTHOR(S)
Saeta, P. N.; Miller, N. A.
PUB. DATE
October 2001
SOURCE
Applied Physics Letters;10/22/2001, Vol. 79 Issue 17, p2704
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report measurements of third-harmonic generation from ultrathin crystalline silicon layers of gradually varying thickness. Both the angular and thickness dependence of the third-harmonic light generated in transmission at normal incidence are consistent with negligible surface contribution to third-harmonic generation in silicon, even under tight focusing. This work illustrates a method for distinguishing surface and bulk contributions to harmonic generation. © 2001 American Institute of Physics.
ACCESSION #
5356372

 

Related Articles

  • Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon. Colombeau, B.; Cowern, N.E.B.; Cristiano, F.; Calvo, P.; Cherkashin, N.; Lamrani, Y.; Claverie, A. // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p1953 

    The evolution of {113} defects as a function of time and depth within Si implant-generated defect profiles has been investigated by transmission electron microscopy. Two cases are considered: one in which the {113} defects evolve into dislocation loops, and the other, at lower dose and energy,...

  • Direct measurements of the velocity and thickness of ‘‘explosively’’ propagating buried molten layers in amorphous silicon. Lowndes, D. H.; Jellison, G. E.; Pennycook, S. J.; Withrow, S. P.; Mashburn, D. N. // Applied Physics Letters;5/19/1986, Vol. 48 Issue 20, p1389 

    Simultaneous infrared (1152 nm) and visible (633 nm) reflectivity measurements with nanosecond resolution were used to study the initial formation and subsequent motion of pulsed KrF laser-induced ‘‘explosively’’ propagating buried molten layers in ion...

  • Interstitial defect reactions in silicon. Asom, M. T.; Benton, J. L.; Sauer, R.; Kimerling, L. C. // Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p256 

    Deep level transient spectroscopy has been employed in a study of impurity-interstitial defect reactions in silicon following room-temperature electron irradiation. Three defects have been isolated and identified from their reactions and electrical properties as Cs-Ci, Ci-Oi, and Ps-Ci. The...

  • Formation and nondestructive characterization of ion implanted silicon-on-insulator layers. Narayan, J.; Kim, S. Y.; Vedam, K.; Manukonda, R. // Applied Physics Letters;8/3/1987, Vol. 51 Issue 5, p343 

    High-temperature oxygen ion implantation has been used to form buried oxide layers in silicon single crystals. The ion implantation and substrate variables, particularly the substrate temperature, were optimized to obtain silicon layers with controlled microstructures near the surface. The...

  • Concentration dependence of optical emission from sulfur-doped crystalline silicon. Brown, T. G.; Bradfield, P. L.; Hall, D. G. // Applied Physics Letters;11/16/1987, Vol. 51 Issue 20, p1585 

    We report the measured dependence of the near-infrared optical emission from sulfur-related impurity centers in crystalline silicon on the sulfur concentration in the sample. The results suggest that each impurity complex contains only a single sulfur atom. Additional experiments support the...

  • Characteristics of the formation of radiation defects in silicon structures. Makhkamov, Sh.; Tursunov, N. A.; Ashurov, M.; Saidov, R. P.; Martynchenko, S. V. // Technical Physics;Jan99, Vol. 44 Issue 1, p110 

    The method of deep-level transient spectroscopy is used to investigate aspects of the formation of radiation defects in silicon p[sup +]-n diffusion structures when bombarded by accelerated electrons. It is shown that for base thicknesses of the p[sup +]-n structures in the range 0.2�0.6 mm...

  • Observation of multiple precipitate layers in MeV Au++-implanted silicon. Alford, T. L.; Theodore, N. D.; Fleischer, E. L.; Mayer, J. W.; Carter, C. B.; Bo\rgesen, P.; Ullrich, B. M.; Cheung, N. W.; Wong, H. // Applied Physics Letters;4/30/1990, Vol. 56 Issue 18, p1796 

    Room-temperature MeV Au++ implantation into silicon with energies above 1.8 MeV shows a splitting of the Au concentration profile in the Rutherford backscattering spectrometry (RBS) spectra. Cross-section transmission electron microscopy micrographs show two distinct regions of Au precipitates...

  • Structure of the Sb-terminated Si(100) surface. Nogami, J.; Baski, A.A. // Applied Physics Letters;2/4/1991, Vol. 58 Issue 5, p475 

    Studies the structure of the Sb-terminated Si(100) surface. Termination of the surface in a symmetric Sb dimer structure; Long-range order of the Sb-terminated surface.

  • Amorphization of ion-implanted layers in silicon using photoacoustic detection. Neto, A. Pinto; Vargas, H. // Applied Physics Letters;2/4/1991, Vol. 58 Issue 5, p496 

    Studies the amorphization of ion-implanted layers in silicon using photoacoustic detection. Effects of ion implantation in the thermal properties of silicon wafers; Decrease values of thermal diffusivity and conductivity.

  • Characterization of random rough surfaces by in-plane light scattering. Zhao, Y.-P.; Wu, Irene; Cheng, C.-F.; Block, Ueyn; Wang, G.-C.; Lu, T.-M. // Journal of Applied Physics;9/1/1998, Vol. 84 Issue 5, p2571 

    Presents information on a study conducted which examined the characteristics of silicon (Si) random rough surfaces, with focus on physics. Methodology used in the study; Details on the reciprocal space structure of the self-affine rough surface; Information on surface roughness parameters;...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics