Tellurium antisites in CdZnTe

Chu, Muren; Terterian, Sevag; Ting, David; Wang, C. C.; Gurgenian, H. K.; Mesropian, Shoghig
October 2001
Applied Physics Letters;10/22/2001, Vol. 79 Issue 17, p2728
Academic Journal
The electrical properties of CdTe and Cd[sub 1-x]Zn[sub x]Te crystals grown under excess tellurium by a modified Bridgman technique are critically dependent on the zinc content. Below an x value of 0.07, the as-grown CdZnTe crystals are n type while, above this value, CdZnTe crystals are p type. The origin of the shallow donor level at 0.01 eV below the conduction band is most likely singly ionized Te antisites (Te at Cd sites). The origin of the deep donor level at 0.75 eV below the conduction band is therefore doubly ionized tellurium antisites. Based on this model, the conduction type of CdZnTe crystals is determined by the results of compensation between the shallow donors of Te antisites and the shallow acceptors of Cd vacancies. High resistivity Cd[sub 0.9]Zn[sub 0.1]Te crystals are produced by compensating the p-type crystals with indium impurity at a low doping level of 1–5×10[sup 15] cm[sup -3]. At room temperature, CdZnTe radiation detectors can resolve the six low energy peaks in the [sup 241]Am spectrum, a performance comparable to that of the best CdZnTe detectors reported. © 2001 American Institute of Physics.


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