TITLE

Influence of microstructure on the carrier concentration of Mg-doped GaN films

AUTHOR(S)
Romano, L. T.; Kneissl, M.; Northrup, J. E.; Van de Walle, C. G.; Treat, D. W.
PUB. DATE
October 2001
SOURCE
Applied Physics Letters;10/22/2001, Vol. 79 Issue 17, p2734
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Room-temperature Hall effect measurements of (0001) Mg-doped GaN films grown on sapphire substrates by metalorganic chemical vapor deposition show a reduction in hole concentration for Mg concentrations greater than 10[sup 20] cm[sup -3]. A combination of secondary ion mass spectrometry and transmission electron microscopy indicates a steadily increasing Mg incorporation during growth and the formation of inversion domains at these high concentrations. We discuss mechanisms that could give rise to a reduction of the hole concentration at high Mg doping levels. © 2001 American Institute of Physics.
ACCESSION #
5356362

 

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