Improved mobilities and resistivities in modulation-doped p-type AlGaN/GaN superlattices

Waldron, Erik L.; Graff, John W.; Schubert, E. Fred
October 2001
Applied Physics Letters;10/22/2001, Vol. 79 Issue 17, p2737
Academic Journal
The transport properties of modulation, shifted modulation, and uniformly doped Al[sub 0.20]Ga[sub 0.80]N/GaN superlattices are presented. The modulation-doped sample is doped only in the AlGaN barriers. The shifted-modulation-doped sample has its dopants shifted by one-quarter period. Measurements reveal a strong improvement in mobility and resistivity for the modulation-doped and shifted-modulation-doped structures versus the uniformly doped structure. The modulation-doped sample has a mobility of 9.2 and 36 cm²/V s at 300 and 90 K respectively and a very low resistivity of 0.20 and 0.068 Ω cm at 300 and 90 K, respectively. Capacitance–voltage profiling shows multiple two-dimensional hole gases. The results are consistent with a reduction of neutral impurity scattering for modulation-doped structures as compared to uniformly doped structures. © 2001 American Institute of Physics.


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