TITLE

Defect-induced lateral chemical heterogeneity at Ni/GaN interfaces and its effect on the electronic properties of the interface

AUTHOR(S)
Barinov, A.; Gregoratti, L.; Kaulich, B.; Kiskinova, M.; Rizzi, A.
PUB. DATE
October 2001
SOURCE
Applied Physics Letters;10/22/2001, Vol. 79 Issue 17, p2752
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Scanning photoemission microscopy (SPEM) has been used to investigate the effect of morphological defects in GaN films grown on a 6H–SiC substrate on the composition and electronic properties of Ni/GaN interfaces in the temperature range of 25–600 °C. The SPEM imaging and spectroscopy identified a direct relation between the defects and the development of spatial heterogeneity in the interfacial composition, best pronounced after moderate annealing at 300 °C. The Schottky barrier height measured at these heterogeneous interfaces changes with advancement of the Ni–GaN reaction at elevated temperatures but exhibits negligible spatial variations. © 2001 American Institute of Physics.
ACCESSION #
5356356

 

Related Articles

  • Band offset measurements of the Si³N[Sub4]/GaN (001) interface. Cook Jr., T.E.; Fulton, C.C.; Mecouch, W.J.; Davis, R.F.; Lucovsky, G.; Nemanich, R.J. // Journal of Applied Physics;9/15/2003, Vol. 94 Issue 6, p3949 

    Reports on the use of x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy to measure the electronic states as SI[sub 3]N[sub 4] was deposited on clean gallium nitride surfaces. Valence band offset yielded by surface analysis; Surface analysis performed after each step in...

  • Large-scale synthesis of GaN nanorods and their photoluminescence. Zhao, L.X.; Meng, G.W.; Peng, X.S.; Zhang, X.Y.; Zhang, L.D. // Applied Physics A: Materials Science & Processing;2002, Vol. 74 Issue 4, p587 

    Large quantities of gallium nitride (GaN) nanorods have been synthesized via direct reaction of metallic gallium vapor with flowing ammonia at 970 °C in a quartz tube. The nanorods have been confirmed as crystalline wurzite GaN by powder X-ray diffraction, selected-area electron diffraction...

  • Gd on GaN(0001) surface: Growth, interaction, and Fermi level movement. Xiao, Wende; Qinlin Guo, Wende; Qikun Xue; Wang, E.G. // Journal of Applied Physics;10/15/2003, Vol. 94 Issue 8, p4847 

    Growth, interfacial reaction, and Fermi level movement of Gd on n-type GaN(0001)-(1×1) surface are studied using x-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and low-energy-electron diffraction. Gd grows in a layer-by-layer-like mode and reacts with the substrate...

  • Photoelectron emission microscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures. Yang, W.-C.; Rodriguez, B.J.; Park, M.; Nemanich, R.J.; Ambacher, 0.; Cimalla, V. // Journal of Applied Physics;11/1/2003, Vol. 94 Issue 9, p5720 

    An intentionally grown GaN film with laterally patterned Ga- and N-face polarities is studied using in situ UV-photoelectron emission microscopy (PEEM). Before chemical vapor cleaning of the surface, the emission contrast between the Ga- and N-face polarities regions was not significant....

  • Elastic strain relief in nitridated Ga metal buffer layers for epitaxial GaN growth. Kim, Yihwan; Shapiro, Noad A.; Feick, Henning; Armitage, Robert; Weber, Eicke R.; Yang, Yi; Cerrina, Franco // Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p895 

    Gallium nitride epitaxial layers were grown on sapphire by molecular-beam epitaxy using nitridated gallium metal films as buffer layers. The mechanical properties of the buffer layers were investigated and correlated with their chemical composition as determined by synchrotron radiation...

  • Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy. Bhat, Thirumaleshwara N.; Rajpalke, Mohana K.; Roul, Basanta; Kumar, Mahesh; Krupanidhi, S. B. // Journal of Applied Physics;Nov2011, Vol. 110 Issue 9, p093718 

    Phase pure wurtzite GaN films were grown on Si (100) substrates by introducing a silicon nitride layer followed by low temperature GaN growth as buffer layers. GaN films grown directly on Si (100) were found to be phase mixtured, containing both cubic (β) and hexagonal (α) modifications....

  • Room-temperature ferromagnetism in Cr-doped GaN single crystals. Park, Sang Eon; Lee, Hyeon-Jun; Cho, Yong Chan; Jeong, Se-Young; Cho, Chae Ryong; Cho, Sunglae // Applied Physics Letters;6/3/2002, Vol. 80 Issue 22, p4187 

    We report on the discovery of a room-temperature ferromagnetism in Cr-doped GaN single crystals with a T[sub c] = 280 K. The addition of Cr into GaN single crystals grown by the flux method induces the lattice constant increase due to the larger Cr atomic radius. In x-ray photoelectron...

  • Spectroscopic analysis of the epitaxial CaO (111)–GaN (0002) interface. Craft, H. S.; Collazo, R.; Losego, M. D.; Mita, S.; Sitar, Z.; Maria, J.-P. // Applied Physics Letters;2/25/2008, Vol. 92 Issue 8, p082907 

    We report an x-ray photoelectron spectroscopy (XPS) study of the CaO/GaN interface. Epitaxial films of CaO (111) were grown on GaN (0002) and analyzed in situ using XPS. We observe Stranski–Krastanov growth, in which CaO coalesces rapidly, then converts to a three-dimensional mode. Data...

  • Photoelectrochemical reaction and H2 generation at zero bias optimized by carrier concentration of n-type GaN. Ono, Masato; Fujii, Katsushi; Ito, Takashi; Iwaki, Yasuhiro; Hirako, Akira; Yao, Takafumi; Ohkawa, Kazuhiro // Journal of Chemical Physics;2/7/2007, Vol. 126 Issue 5, p054708 

    The authors studied the photoelectrochemical properties dependent on carrier concentration of n-type GaN. The photocurrent at zero bias became the maximum value at the carrier concentration of 1.7×1017 cm-3. Using the sample optimized carrier concentration, the authors achieved H2 gas...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics