Defect-induced lateral chemical heterogeneity at Ni/GaN interfaces and its effect on the electronic properties of the interface

Barinov, A.; Gregoratti, L.; Kaulich, B.; Kiskinova, M.; Rizzi, A.
October 2001
Applied Physics Letters;10/22/2001, Vol. 79 Issue 17, p2752
Academic Journal
Scanning photoemission microscopy (SPEM) has been used to investigate the effect of morphological defects in GaN films grown on a 6H–SiC substrate on the composition and electronic properties of Ni/GaN interfaces in the temperature range of 25–600 °C. The SPEM imaging and spectroscopy identified a direct relation between the defects and the development of spatial heterogeneity in the interfacial composition, best pronounced after moderate annealing at 300 °C. The Schottky barrier height measured at these heterogeneous interfaces changes with advancement of the Ni–GaN reaction at elevated temperatures but exhibits negligible spatial variations. © 2001 American Institute of Physics.


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