Influence of tensile and compressive strain on the band gap energy of ordered InGaP

Nova´k, J.; Haseno¨hrl, S.; Alonso, M. I.; Garriga, M.
October 2001
Applied Physics Letters;10/22/2001, Vol. 79 Issue 17, p2758
Academic Journal
The band gap energy of ordered and strained In[sub x]Ga[sub 1-x]P as a function of ternary composition was studied. Epitaxial growth using a metalorganic vapor phase epitaxy technique at a reactor pressure of 20 mbar and T[sub g]=580 °C allowed us to prepare a set of samples with nearly constant ordering parameter η. Optical measurements were performed at room temperature using a rotating polarizer ellipsometer with a spectral energy range 1.4–5.1 eV. Comparing the experimental data with the theory, we have shown that the band gap energy E[sub g] dependence on composition closely follows the prediction of Wei and Zunger [S. Wei and A. Zunger, Phys. Rev. B 49, 14337 (1994)]. This prediction is more valid as the commonly used parabolic interpolation of E[sub g] between InP and GaP values. © 2001 American Institute of Physics.


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