Selective growth of GaN on a SiC substrate patterned with an AlN seed layer by ammonia molecular-beam epitaxy

Tang, H.; Bardwell, J. A.; Webb, J. B.; Moisa, S.; Fraser, J.; Rolfe, S.
October 2001
Applied Physics Letters;10/22/2001, Vol. 79 Issue 17, p2764
Academic Journal
Highly selective growth of GaN on 4H–SiC using the SiC substrate as a pseudomask has been demonstrated using the ammonia molecular-beam-epitaxy technique. A total lack of nucleation on the bare SiC surface was observed under typical GaN growth conditions. The nucleation of the GaN layer occurred preferentially from a patterned thin (300 Å) AlN seed layer, which had been predeposited on the SiC surface using the magnetron-sputter-epitaxy technique and patterned into parallel stripes by photolithography and chemically assisted ion-beam etching. Evidence of lateral overgrowth was observed by scanning electron microscopy and x-ray diffraction studies. The GaN stripes grown show extremely smooth side facets due to the lateral growth. © 2001 American Institute of Physics.


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