Ion-beam-assisted growth of CoPt[sub 3] films

Vasumathi, D.; Maranville, B. B.; Hellman, F.
October 2001
Applied Physics Letters;10/22/2001, Vol. 79 Issue 17, p2782
Academic Journal
CoPt[sub 3] films are known to exhibit room-temperature perpendicular magnetic anisotropy when grown between 200 °C–400 °C. We have used Ar ion-beam-assisted growth of CoPt[sub 3] films in an effort to enhance the anisotropy and also lower the temperature range where it occurs. We present a systematic study of the dependence of magnetic properties of the films on substrate temperature during growth, ion beam energy, and ion to atom arrival ratio, R, at the substrate. We find a significant increase of the anisotropy in films grown at 100 °C compared to the R=0 value resulting in perpendicular anisotropy at moderate growth temperatures. At 250 °C and 400 °C, however, there is a monotonic decrease in anisotropy with R for all energies. © 2001 American Institute of Physics.


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