Temperature dependence of gate currents in thin Ta[sub 2]O[sub 5] and TiO[sub 2] films

Luo, Z. J.; Guo, Xin; Ma, T. P.; Tamagawa, T.
October 2001
Applied Physics Letters;10/22/2001, Vol. 79 Issue 17, p2803
Academic Journal
This letter reports our study of the temperature dependence of gate currents in thin Ta[sub 2]O[sub 5] and TiO[sub 2] films. The study was conducted (1) to study the conduction mechanisms and band alignments, and (2) to determine whether the gate leakage current is tolerable at high temperatures for either of these high-dielectric-constant (high-k) oxides. The I–V characteristics of these oxides were measured and analyzed over a wide temperature range from 25 to 400 °C. Currents in Ta[sub 2]O[sub 5] samples exhibited stronger temperature dependence than those in TiO[sub 2] samples, especially at high fields, mainly due to a much smaller electron barrier height of Ta[sub 2]O[sub 5] over Si (0.28 eV) than that of TiO[sub 2] over Si (0.9 eV). © 2001 American Institute of Physics.


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