# Nonlinear ground-state absorption observed in a single quantum dot

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- Optical absorption of intersubband transitions in In[sub 0.3]Ga[sub 0.7]As/GaAs multiple quantum dots. Pattada, B.; Chen, Jiayu; Zhou, Qiaoying; Manasreh, M. O.; Hussein, M. L.; Ma, W.; Salamo, G. J. // Applied Physics Letters;4/14/2003, Vol. 82 Issue 15, p2509
Fourier-transform infrared spectroscopy technique was employed to investigate the optical absorption coefficient of intersubband transitions in Si-doped In[sub 0.3]Ga[sub 0.7]As/GaAs multiple quantum dot structures. Waveguides with 45Â° polished facets were fabricated from molecular beam...

- Saturation of THz-frequency intraband absorption in InAs/GaAs quantum dot molecules. Boucaud, P.; Gill, K. S.; Gill, K.S.; Williams, J. B.; Williams, J.B.; Sherwin, M. S.; Sherwin, M.S.; Schoenfeld, W. V.; Schoenfeld, W.V.; Petroff, P. M.; Petroff, P.M. // Applied Physics Letters;7/24/2000, Vol. 77 Issue 4
We have investigated the far-infrared absorption in InAs/GaAs quantum dot molecules. The quantum dot molecules consist of two vertically coupled InAs self-assembled quantum dots separated by a GaAs barrier. The electronic coupling between the dot states results in an intraband absorption at THz...

- Structure in the lowest absorption feature of CdSe quantum dots. Norris, D. J.; Bawendi, M. G. // Journal of Chemical Physics;10/1/1995, Vol. 103 Issue 13, p5260
We use transient differential absorption experiments to investigate the â€˜â€˜single dotâ€™â€™ absorption line shape of CdSe quantum dots. We observe both a narrow (full width half maximum âˆ¼5 meV) and a broad (âˆ¼50 meV) bleach component within the inhomogeneously...

- A method of detecting the number of electrons in a square-well quantum dot using far-infrared absorption. Ugajin, Ryuichi // Journal of Applied Physics;6/1/1995, Vol. 77 Issue 11, p5509
Presents a study which calculated the intensity of far-infrared absorption of a single electron and two electron in a square-well quantum dot under an external electric field. Method of calculation used; Discussion on the stark effect on optical transitions in a square-well quantum dot; Conclusion.

- Effect of size nonuniformity on the absorption spectrum of a semiconductor quantum dot system. Wu, Wei-Yu; Schulman, J. N.; Hsu, T. Y.; Efron, Uzi // Applied Physics Letters;9/7/1987, Vol. 51 Issue 10, p710
The interband optical absorption of a nonuniform semiconductor quantum dot system is calculated. The effect of dot size variation on the resolvability of the absorption peaks is estimated. The dots are assumed to be cubic, with a size distribution described by a Gaussian function. It is shown...

- Intraband absorption in the 8â€“12 Î¼m band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice. Zhuang, Q. D.; Li, J. M.; Li, H. X.; Zeng, Y. P.; Pan, L.; Chen, Y. H.; Kong, M. Y.; Lin, L. Y. // Applied Physics Letters;12/21/1998, Vol. 73 Issue 25
Normal-incident infrared absorption in the 8â€“12-Î¼m-atmospheric spectral window in the InGaAs/GaAs quantum-dot superlattice is observed. Using cross-sectional transmission electron microscopy, we find that the InGaAs quantum dots are perfectly vertically aligned in the growth direction...

- Effect of anisotropy of band structure on optical gain in spherical quantum dots based on PbS and PbSe. Andreev, A. D.; Lipovskiı, A. A. // Semiconductors;Dec99, Vol. 33 Issue 12, p1304
Results of an experimental and theoretical study of the optical absorption spectra of spherical quantum dots based on PbS and PbSe are presented. A rigorous theoretical analysis of the energy spectra and optical transitions is performed within the framework of the four-band k Â· p...

- Terahertz-frequency electronic coupling in vertically coupled quantum dots. Boucaud, P.; Williams, J. B.; Williams, J.B.; Gill, K. S.; Gill, K.S.; Sherwin, M. S.; Sherwin, M.S.; Schoenfeld, W. V.; Schoenfeld, W.V.; Petroff, P. M.; Petroff, P.M. // Applied Physics Letters;12/25/2000, Vol. 77 Issue 26
We have studied terahertz absorption of samples containing two layers of self-aligned, self-assembled InAs quantum dots separated by a thin GaAs barrier. The vertically coupled dots were charged with electrons by applying a voltage bias between a metal gate and a doped layer beneath the dots....

- Intraband absorption in n-doped InAs/GaAs quantum dots. Sauvage, S.; Boucaud, P. // Applied Physics Letters;11/10/1997, Vol. 71 Issue 19, p2785
Investigates the intraband absorption in n-doped indium arsenide/gallium arsenide quantum dots. Value of the maximum infrared absorption; Effect of size fluctuations on the broadening effect; Magnitude of the absorption along the growth axis for the one layer dot plane.