Nanolithography of silicon: An approach for investigating tip-surface interactions during writing

Ramsier, R. D.; Ralich, R. M.; Lyuksyutov, S. F.
October 2001
Applied Physics Letters;10/22/2001, Vol. 79 Issue 17, p2820
Academic Journal
We report an approach for monitoring tip-surface interactions. The approach is based on power spectrum analysis of atomic force microscope (AFM) tip oscillations during scanning probe nanolithography on Si surfaces. A single mode harmonic oscillator model allows us to determine the main characteristics of the AFM tip-surface interaction: the amplitude of oscillation, the resonant frequency, and the damping factor, during the writing process. We measure these quantities in scanning probe anodization versus the bias voltage. By fixing the length of lithographically patterned lines, and the energy deposited into each line, we search for trends which may reveal the major factors controlling the quality of AFM-written nanostructures. Our data are consistent with the concepts that a water meniscus and electrostatic tip-surface interactions dominate contact AFM lithography. © 2001 American Institute of Physics.


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