TITLE

Si[sub 3]N[sub 4]/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors

AUTHOR(S)
Hu, X.; Koudymov, A.; Simin, G.; Yang, J.; Asif Khan, M.; Tarakji, A.; Shur, M. S.; Gaska, R.
PUB. DATE
October 2001
SOURCE
Applied Physics Letters;10/22/2001, Vol. 79 Issue 17, p2832
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on a metal–insulator–semiconductor heterostructure field-effect transistor (MISHFET) using Si[sub 3]N[sub 4] film simultaneously for channel passivation and as a gate insulator. This design results in increased radio-frequency (rf) powers by reduction of the current collapse and it reduces the gate leakage currents by four orders of magnitude. A MISHFET room temperature gate current of about 90 pA/mm increases to only 1000 pA/mm at ambient temperature as high as 300 °C. Pulsed measurements show that unlike metal–oxide–semiconductor HFETs and regular HFETs, in a Si[sub 3]N[sub 4] MISHFET, the gate voltage amplitude required for current collapse is much higher than the threshold voltage. Therefore, it exhibits significantly reduced rf current collapse. © 2001 American Institute of Physics.
ACCESSION #
5356329

 

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