TITLE

N-side illuminated microcrystalline silicon solar cells

AUTHOR(S)
Gross, A.; Vetterl, O.; Lambertz, A.; Finger, F.; Wagner, H.; Dasgupta, A.
PUB. DATE
October 2001
SOURCE
Applied Physics Letters;10/22/2001, Vol. 79 Issue 17, p2841
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thin-film microcrystalline silicon solar cells illuminated through the n layer were studied and compared with classical p-layer illuminated cells. To investigate the corresponding charge carrier extraction properties, variation of the intrinsic absorber layer thickness was carried out. It was found that the J–V characteristic and the quantum efficiency of the n- and p-side illuminated cells are almost identical in the thickness range investigated, up to 7 μm. No differences in the collection of photogenerated electrons or holes are observed. Hence, the illumination side of μc-Si:H single junction solar cells of conventional thickness may be randomly chosen without adverse effect on their performance. © 2001 American Institute of Physics.
ACCESSION #
5356326

 

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