TITLE

Evaluation of nucleic acid duplex formation on gold over layers in biosensor fabricated using Czochralski-grown single-crystal silicon substrate

AUTHOR(S)
Gopinath, Subash C. B.; Kumaresan, Ramanujam; Awazu, Koichi; Fujimaki, Makoto; Mizuhata, Minoru; Tominaga, Junji; Kumar, Penmetcha K. R.
PUB. DATE
September 2010
SOURCE
Analytical & Bioanalytical Chemistry;Sep2010, Vol. 398 Issue 2, p751
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
With a view to developing an economical and elegant biosensor chip, we compared the efficiencies of biosensors that use gold-coated single-crystal silicon and amorphous glass substrates. The reflectivity of light over a wide range of wavelengths was higher from gold layer coated single-crystal silicon substrates than from glass substrates. Furthermore, the efficiency of reflection from gold layers of two different thicknesses was examined. The thicker gold layer (100 nm) on the single-crystal silicon showed a higher reflectivity than the thinner gold film (10 nm). The formation of a nucleic acid duplex and aptamer–ligand interactions were evaluated on these gold layers, and a crystalline silicon substrate coated with the 100-nm-thick gold layer is proposed as an alternative substrate for studies of interactions of biomolecules. [Figure not available: see fulltext.]
ACCESSION #
53556236

 

Related Articles

  • Preparation of nanocrystalline LiMnPO via a simple and novel method and its isothermal kinetics of crystallization. Chen Liu; Xuehang Wu; Wenwei Wu; Jinchao Cai; Sen Liao // Journal of Materials Science;Apr2011, Vol. 46 Issue 8, p2474 

    The precursor of nanocrystalline LiMnPO was obtained by solid-state reaction at low heat using LiSO·HO, MnSO·HO, and NaPO·12HO as raw materials, maintaining the mixture at 333 K for 4 h, and then washing the mixture with deionized water to remove soluble inorganic salts, and at last...

  • Defects in preamorphized single-crystal silicon. Ayres, J. R.; Brotherton, S. D.; Shannon, J. M.; Politiek, J. // Applied Physics Letters;11/19/1990, Vol. 57 Issue 21, p2214 

    Direct electrical characterization of 1-μm-thick Si+ preamorphized and epitaxially regrown silicon layers has revealed a low concentration of residual deep-level defects within the regrown layer. A deep-level trap at Ec -0.40 eV has been found associated with the amorphous-crystalline...

  • Crystalline and amorphous polymeric solid nitrogen. Yakub, L.N. // Low Temperature Physics;Sep/Oct2003, Vol. 29 Issue 9/10, p780 

    The structure and thermodynamic functions of solid high-density nonmolecular nitrogen in the crystalline and amorphous phases are studied by a Monte Carlo simulation technique on the basis of the potential model proposed earlier for the cubic gauche polymeric crystal. The solid amorphous state...

  • Fast interfacial oxidation of amorphous Si[sub 1-x]Ge[su bx]: H by SnO[sub 2]. Edelman, F.; Brener, R. // Applied Physics Letters;7/17/1995, Vol. 67 Issue 3, p389 

    Examines the fast oxidation of amorphous Si[sub 1-x]Ge[sub x]:H by interfacial reaction with SnO[sub 2]. Significance of the rate of interfacial oxidation; Dependence of the extent of the interfacial reaction on the germanium content in a-Si[sub1-x]Ge[sub x]; Reduction of the SnO[sub 2] layers...

  • Elliptical grain growth in the solid phase crystallization of amorphous... Choi, J.H.; Lee, J.Y.; Kim, Y.T. // Applied Physics Letters;5/17/1999, Vol. 74 Issue 20, p2933 

    Examines elliptical grain growth in the solid-phase crystallization of amorphous films. Elliptical nuclei in the initial nucleation state; Orientation of the elliptical grains; Effects of annealing on grain growth.

  • The hardness and Young’s modulus of amorphous hydrogenated carbon and silicon films measured with an ultralow load indenter. Jiang, X.; Reichelt, K.; Stritzker, B. // Journal of Applied Physics;12/15/1989, Vol. 66 Issue 12, p5805 

    Presents information on a study which determined the hardness (H) and the Young's modulus of amorphous hydrogenated carbon (a-C:H) and silicon films prepared under different conditions. Preparation of a-C:H films on silicon single-crystal substrates; Calculation of the H; Conditions used in the...

  • Thermal conductivity measurement from 30 to 750 K: the 3ω method. Cahill, David G. // Review of Scientific Instruments;Feb1990, Vol. 61 Issue 2, p802 

    An ac technique for measuring the thermal conductivity of dielectric solids between 30 and 750 K is described. This technique, the 3ω method, can be applied to bulk amorphous solids and crystals as well as amorphous films tens of microns thick. Errors from black-body radiation are calculated...

  • Pd induced lateral crystallization of amorphous Si thin films. Seok-Woon lee; Yoo-Chan Jeon // Applied Physics Letters;3/27/1995, Vol. 66 Issue 13, p1671 

    Reduces the crystallization of amorphous silicon (a-Si) thin films. Crystallization of a-Si thin films with palladium films; Observation of low-temperature and contamination-free lateral crystallization phenomena; Growth of a thermal oxide film at 1000 Angstrom; Two metal-inducing processes for...

  • Enhanced microhardness in Zr[sub 65.0]Al[sub 7.5]Ni[sub 10.0]Cu[sub 17.5] amorphous rods on.... Frankwicz, P.S.; Ram, S. // Applied Physics Letters;5/13/1996, Vol. 68 Issue 20, p2825 

    Investigates the crystallization of amorphous rods. Occurrence of multiple primary crystallization; Coprecipitation transformation of samples to thermally stable phase; Local precipitations of alpha-zirconium nanocrystallites.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics