TITLE

Low frequency noise in InSb/GaAs and InSb/Si channels

AUTHOR(S)
Dobbert, J.; Tran, L.; Hatami, F.; Masselink, W. T.; Kunets, Vas. P.; Salamo, G. J.
PUB. DATE
September 2010
SOURCE
Applied Physics Letters;9/6/2010, Vol. 97 Issue 10, p102101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The low frequency noise features of InSb grown on GaAs and Si substrates using molecular-beam epitaxy are investigated in the temperature range from 80 to 300 K. In all samples the flicker noise dominates the spectra, with Hooge factors as low as 2×10-5 and 9×10-5 for InSb on GaAs and Si, respectively. The temperature dependence of the Hooge factors is investigated.
ACCESSION #
53507824

 

Related Articles

  • Metal-semiconductor field-effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxy. Metze, G. M.; Choi, H. K.; Tsaur, B-Y. // Applied Physics Letters;1984, Vol. 45 Issue 10, p1107 

    Device-quality GaAs layers have been grown directly on Si(100) substrates by molecular beam epitaxy. Metal-semiconductor field-effect transistors have been fabricated in these layers with transconductance as high as 85 mS/mm and leakage current as low as 1 μA at Vgs =-3 V for gate dimensions...

  • Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect. Chen, Z.; Pei, Y.; Newman, S.; Brown, D.; Chung, R.; Keller, S.; DenBaars, S. P.; Nakamura, S.; Mishra, U. K. // Applied Physics Letters;4/27/2009, Vol. 94 Issue 17, p171117 

    Field-effect transistors (FETs) were grown on both GaN and AlGaN buffers. X-ray reciprocal space mapping and ω-2θ scans showed that the AlGaN barriers grown on these two buffers had different Al compositions and growth rates, which was attributed to the compositional pulling effect....

  • CdHgTe heterostructures on large-area Si(310) substrates for infrared photodetector arrays of the short-wavelength spectral range. Yakushev, M.; Varavin, V.; Remesnik, V.; Marin, D. // Semiconductors;Jun2014, Vol. 48 Issue 6, p767 

    Heteroepitaxial structures n-CdHgTe for the near-infrared spectral range ( x ≈ 0.4) are grown by molecular beam epitaxy on Si(310) substrates 72.6 and 100 mm in diameter. High composition homogeneity over the structure area is attained; the variation in x for 100-mm wafers is 0.015-0.025....

  • Applications of the Infrared Measurement Analyzer: Hydrogenated LWIR HgCdTe Detectors. Buurma, Christopher; Boieriu, Paul; Bommena, Ramana; Sivananthan, Sivalingam // Journal of Electronic Materials;Nov2013, Vol. 42 Issue 11, p3283 

    Low-cost silicon-based alternative substrates are an attractive choice for next-generation large-area high-resolution multicolor infrared (IR) detector arrays. However, the high density of dislocations formed during molecular-beam epitaxy growth of HgCdTe/CdTe/Si limits the performance of IR...

  • High-Performance MWIR/LWIR Dual-Band 640 × 480 HgCdTe/Si FPAs. Patten, E. A.; Goetz, P. M.; Vilela, M. F.; Olsson, K.; Lofgreen, D. D.; Vodicka, J. G.; Johnson, S. M. // Journal of Electronic Materials;Oct2010, Vol. 39 Issue 10, p2215 

    HgCdTe grown on large-area Si substrates allows for larger array formats and potentially reduced focal-plane array (FPA) cost compared with smaller, more expensive CdZnTe substrates. The goal of this work is to evaluate the use of HgCdTe/Si for mid-wavelength/long-wavelength infrared (MWIR/LWIR)...

  • MBE Growth of Mid-wave Infrared HgCdTe Layers on GaSb Alternative Substrates. Lei, W.; Gu, R. J.; Antoszewski, J.; Dell, J.; Neusser, G.; Sieger, M.; Mizaikoff, B.; Faraone, L. // Journal of Electronic Materials;Sep2015, Vol. 44 Issue 9, p3180 

    GaSb has been studied as a new alternative substrate for growing HgCdTe via molecular beam epitaxy (MBE). Cross-sectional transmission electron microscopy (TEM) studies indicate that MBE-grown CdTe buffer layers on GaSb have much lower misfit dislocation density than comparable layers grown on...

  • Analyzing a two-step polarization process in a pentacene/poly(vinylidene fluoride - trifluoroethylene) double-layer device using Maxwell-Wagner model. Li, Jun; Weis, Martin; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa // Journal of Applied Physics;Jan2012, Vol. 111 Issue 2, p023706 

    The current-voltage (I-V) measurement is one of the most common indirect measurements of ferroelectric phenomena. Here, we show that the I-V characteristic of a pentacene/poly(vinylidene fluoride - trifluoroethylene) double-layer device sandwiched between two metal electrodes can be converted...

  • Pseudomorphic ZnSe/n-GaAs doped-channel field-effect transistors by interrupted molecular beam epitaxy. Studtmann, G. D.; Gunshor, R. L.; Kolodziejski, L. A.; Melloch, M. R.; Cooper, J. A.; Pierret, R. F.; Munich, D. P.; Choi, C.; Otsuka, N. // Applied Physics Letters;4/11/1988, Vol. 52 Issue 15, p1249 

    The fabrication and current-voltage characteristics of the first depletion-mode field-effect transistors based on a pseudomorphic ZnSe/n-GaAs heterointerface are described. The devices are doped-channel field-effect transistors produced by means of interrupted growth with the use of two separate...

  • High transconductance in-plane-gated transistors. Wieck, A.D.; Ploog, K. // Applied Physics Letters;8/31/1992, Vol. 61 Issue 9, p1048 

    Demonstrates the fabrication of one-dimensional (1D) field-effect transistors at room temperature. Basis for the 1D transistors; Determination of the channel effective width; Use of molecular beam epitaxy grown heterostructures to prepare the channels; Factors attributed to higher current and...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics