Low frequency noise in InSb/GaAs and InSb/Si channels

Dobbert, J.; Tran, L.; Hatami, F.; Masselink, W. T.; Kunets, Vas. P.; Salamo, G. J.
September 2010
Applied Physics Letters;9/6/2010, Vol. 97 Issue 10, p102101
Academic Journal
The low frequency noise features of InSb grown on GaAs and Si substrates using molecular-beam epitaxy are investigated in the temperature range from 80 to 300 K. In all samples the flicker noise dominates the spectra, with Hooge factors as low as 2×10-5 and 9×10-5 for InSb on GaAs and Si, respectively. The temperature dependence of the Hooge factors is investigated.


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