Si-based ultrasmall multiswitching single-electron transistor operating at room-temperature

Shin, S. J.; Jung, C. S.; Park, B. J.; Yoon, T. K.; Lee, J. J.; Kim, S. J.; Choi, J. B.; Takahashi, Y.; Hasko, D. G.
September 2010
Applied Physics Letters;9/6/2010, Vol. 97 Issue 10, p103101
Academic Journal
An ultrasmall single-electron transistor has been made by scaling the size of a fin field-effect transistor structure down to an ultimate limiting form, resulting in the reliable formation of a sub-5 nm Coulomb island. The charge stability data feature the first exhibition of three and a half clear Coulomb diamonds at 300 K, each showing a high peak-to-valley current ratio. Its charging energy is estimated to be more than one order magnitude larger than the thermal energy at room-temperature. The hybrid literal gate integrated by this single-electron transistor combined with a field-effect transistor displays >5 bit multiswitching behavior at 300 K with a large voltage swing of ∼1 V.


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