Fundamental limits of energy dissipation in charge-based computing

Boechler, Graham P.; Whitney, Jean M.; Lent, Craig S.; Orlov, Alexei O.; Snider, Gregory L.
September 2010
Applied Physics Letters;9/6/2010, Vol. 97 Issue 10, p103502
Academic Journal
According to Landauer’s principle, dissipation of energy is only necessary when information is erased, suggesting that vastly more efficient logical switches than transistors are possible. However, an influential analysis of binary switching suggests that representing information with electric charge is the root of the problem, that Landauer’s principle is fundamentally flawed, and that any movement of charge, such as charging a capacitor, must dissipate at least kBT ln(2). Here, using a RC circuit, an energy loss of much less than kBT ln(2) is demonstrated while delivering energy of 100 kBT ln(2) to the capacitor. This shows that there is no fundamental lower limit to energy dissipation in moving charge.


Related Articles

  • Response to 'Comment on 'Fundamental limits of energy dissipation in charge-based computing' ' [Appl. Phys. Lett. 98, 096101 (2011)]. Boechler, G. P.; Whitney, J. M.; Lent, C. S.; Orlov, A. O.; Snider, G. L. // Applied Physics Letters;2/28/2011, Vol. 98 Issue 9, p096102 

    No abstract available.

  • Influence of film structure and light on charge trapping and dissipation dynamics in spun-cast organic thin-film transistors measured by scanning Kelvin probe microscopy. Teague, L. C.; Loth, M. A.; Anthony, J. E. // Applied Physics Letters;6/25/2012, Vol. 100 Issue 26, p263305 

    Herein, time-dependent scanning Kelvin probe microscopy of solution processed organic thin film transistors (OTFTs) reveals a correlation between film microstructure and OTFT device performance with the location of trapped charge within the device channel. The accumulation of the observed...

  • Metal-oxide-semiconductor field effect transistor humidity sensor using surface conductance. Song, Seok-Ho; Yang, Hyun-Ho; Han, Chang-Hoon; Ko, Seung-Deok; Lee, Seok-Hee; Yoon, Jun-Bo // Applied Physics Letters;3/5/2012, Vol. 100 Issue 10, p101603 

    This letter presents a metal-oxide-semiconductor field effect transistor based humidity sensor which does not use any specific materials to sense the relative humidity. We simply make use of the low pressure chemical vapor deposited (LPCVD) silicon dioxide's surface conductance change. When the...

  • Self-heating enhanced charge trapping effect for InGaZnO thin film transistor. Chen, Te-Chih; Chang, Ting-Chang; Hsieh, Tien-Yu; Tsai, Ming-Yen; Chen, Yu-Te; Chung, Yi-Chen; Ting, Hung-Che; Chen, Chia-Yu // Applied Physics Letters;7/23/2012, Vol. 101 Issue 4, p042101 

    This paper investigates the degradation mechanism under self-heating stress for InGaZnO thin film transistor. The apparent positive threshold voltage (Vt) shift and on-current degradation indicate that the combination of trap states generation and electron trapping effect occur during stress....

  • Dynistors with nanosecond response times. Korotkov, S.; Aristov, Yu.; Voronkov, V.; Zhmodikov, A.; Korotkov, D.; Lyublinskii, A. // Instruments & Experimental Techniques;Sep2009, Vol. 52 Issue 5, p695 

    The results of studies of deep-level dynistors (DLDs) in modes of switching high-power nanosecond current pulses at a current rise rate of up to 200 A/ns unique for semiconductor switches are presented. The dependences of the switching energy loss in DLDs on the amplitude of the control current...

  • Generalized rate equations governing the light-induced degradation and the thermal recovery of a-Si:H films. Hong, C. S.; Hwang, H. L. // Journal of Applied Physics;9/1/1987, Vol. 62 Issue 5, p1989 

    Presents a study which examined the rate equations governing light-induced degradation and thermal recovery of undoped a-Si:H films. Event that indicated that both degradation and recovery are thermally activated processes; Condition of defect density during degradation; Cause of structural...

  • Series-connected MOSFETs increase voltage & power handling. Uzelac, Ilija; Reiserer, Ron // EDN Europe;Jan2015, p24 

    The article discusses the design idea for series-connected metal-oxide-semiconductor field-effect transistors (MOSFETs) to raise voltage and power handling and charging of large capacitor banks. It demonstrates the design of the method for charging large capacitor banks using a series connection...

  • Optimization of charge sensitivity of a single electron tunneling transistor with a superconducting grain. Hanke, Ulrik; Chao, K. A.; Galperin, Yu. M. // Journal of Applied Physics;7/15/1996, Vol. 80 Issue 2, p1245 

    Focuses on a study which calculated the charge sensitivity of a capacitive-coupled double-junction single electron tunneling transistor (SETT). Background on the sensitivity of a SETT; Information on a superconducting metallic grain; Significance of the study.

  • The Mighty Molecule.  // CIO Insight;Jul2005, Issue 55, p20 

    Physicists at the University of Alberta succeeded in transmitting an electrical charge through a hydrocarbon molecule, creating a nanotech version of the common transistor. The breakthrough could lead to a quantum leap forward in computer miniaturization.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics