Cathodoluminescence of GaInN quantum wells grown on nonpolar a plane GaN: Intense emission from pit facets

Fujan, K. J.; Feneberg, M.; Neuschl, B.; Meisch, T.; Tischer, I.; Thonke, K.; Schwaiger, S.; Izadi, I.; Scholz, F.; Lechner, L.; Biskupek, J.; Kaiser, U.
September 2010
Applied Physics Letters;9/6/2010, Vol. 97 Issue 10, p101904
Academic Journal
GaxIn1-xN quantum wells grown by metal organic vapor phase epitaxy on a plane GaN grown on r plane sapphire substrate typically show relatively large surface pits. We show by correlation of low temperature photoluminescence, cathodoluminescence, scanning and transmission electron microscopy that the different semipolar side facets of these pits dominate the overall luminescence signal of such layers.


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