TITLE

Low gap amorphous GaN1-xAsx alloys grown on glass substrate

AUTHOR(S)
Yu, K. M.; Novikov, S. V.; Broesler, R.; Liliental-Weber, Z.; Levander, A. X.; Kao, V. M.; Dubon, O. D.; Wu, J.; Walukiewicz, W.; Foxon, C. T.
PUB. DATE
September 2010
SOURCE
Applied Physics Letters;9/6/2010, Vol. 97 Issue 10, p101906
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Amorphous GaN1-xAsx layers with As content in the range of x=0.1 to 0.6 were grown by molecular beam epitaxy on Pyrex glass substrate. These alloys exhibit a wide range of band gap values from 2.2 to 1.3 eV. We found that the density of the amorphous films is ∼0.8–0.85 of their corresponding crystalline value. These amorphous films have smooth morphology, homogeneous composition, and sharp well defined optical absorption edges. The measured band gap values for the crystalline and amorphous GaN1-xAsx alloys are in excellent agreement with the predictions of the band anticrossing model. The high absorption coefficient of ∼105 cm-1 for the amorphous GaN1-xAsx films suggests that relatively thin films (on the order of 1 μm) are necessary for photovoltaic application.
ACCESSION #
53507790

 

Related Articles

  • La-doped SrTiO3 films with large cryogenic thermoelectric power factors. Cain, Tyler A.; Kajdos, Adam P.; Stemmer, Susanne // Applied Physics Letters;5/6/2013, Vol. 102 Issue 18, p182101 

    The thermoelectric properties at temperatures between 10 K and 300 K of La-doped SrTiO3 thin films grown by hybrid molecular beam epitaxy (MBE) on undoped SrTiO3 substrates are reported. Below 50 K, the Seebeck coefficients exhibit very large magnitudes due to the influence of phonon drag....

  • XRD Analyses of In0.10AlxGa0.90-xN (0≤x≤0.20) Quaternary Alloys. Yusof, Y.; Abid, M. A.; Raof, N. H. Abd; Ng, S. S.; Hassan, H. Abu; Hassan, Z. // AIP Conference Proceedings;7/7/2010, Vol. 1250 Issue 1, p301 

    We present the structural properties of quaternary In0.10AlxGa0.90-xN (0≤x≤0.20) alloys grown on sapphire substrate by molecular beam epitaxy. High resolution X-ray diffraction (HR-XRD) analyses were used to investigate the phase and crystalline quality of quaternary...

  • Optical absorption in epitaxial La1-xSrxFeO3 thin films. Scafetta, M D.; Xie, Y. J.; Torres, M.; Spanier, J. E.; May, S. J. // Applied Physics Letters;2/25/2013, Vol. 102 Issue 8, p081904 

    We report the dependence of optical absorption on Sr concentration in La1-xSrxFeO3 (LSFO) (x≤0.4) perovskite thin films. Strained epitaxial films were deposited on SrTiO3 substrates using oxide molecular beam epitaxy. We find systematic changes in the optical absorption spectra with...

  • In situ RHEED analysis of epitaxial GdO thin films grown on Si (001). Xiang, W.; Ni, H.; Lu, H. // Applied Physics A: Materials Science & Processing;Feb2013, Vol. 110 Issue 2, p423 

    Epitaxial GdO thin films were successfully grown on Si (001) substrates using a two-step approach by laser molecular-beam epitaxy. At the first step, a ∼0.8 nm thin layer was deposited at the temperature of 200 C as the buffer layer. Then the substrate temperature was increased to 650 C and...

  • Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy. Boschker, Jos E.; Boniardi, Mattia; Redaelli, Andrea; Riechert, Henning; Calarco, Raffaella // Applied Physics Letters;1/12/2015, Vol. 106 Issue 2, p1 

    Here, we report on the electrical characterization of phase change memory cells containing a Ge3Sb2Te6 (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a...

  • Solid phase crystallization of amorphous Si1-xGex films deposited on SiO2 by molecular beam epitaxy. Hwang, Chang-Won; Ryu, Myung-Kwan; Kim, Ki-Bum; Lee, Seung-Chang; Kim, Chang-Soo // Journal of Applied Physics;4/1/1995, Vol. 77 Issue 7, p3042 

    Focuses on a study which investigated the solid state crystallization mechanism of amorphous Si[sub1-x]Ge[subx] alloy films deposited on silicon dioxide by molecular beam epitaxy. Background to the study; Experimental methods; Experimental results and discussion.

  • Growth Parameters for Thin Film InBi Grown by Molecular Beam Epitaxy. Keen, B.; Makin, R.; Stampe, P.; Kennedy, R.; Sallis, S.; Piper, L.; McCombe, B.; Durbin, S. // Journal of Electronic Materials;Apr2014, Vol. 43 Issue 4, p914 

    The alloying of bismuth with III-V semiconductors, in particular GaAs and InAs thin films grown by molecular beam epitaxy (MBE), has attracted considerable interest due to the accompanying changes in band structure and lattice constant. Specifically, bismuth incorporation in these compounds...

  • Growth and characterization of Si1-xMnx alloys on Si(100). Yangting Zhang; Qian Jiang; Smith, David J.; Drucker, Jeff // Journal of Applied Physics;8/1/2005, Vol. 98 Issue 3, p033512 

    Si1-xMnx alloy films of 50 nm thickness with 0.005<=x<=0.035 were grown by low-temperature molecular-beam epitaxy onto Si(100) substrates held at temperatures T in the range of 150 °C<=T<=350 °C. All films exhibit surface roughness with ∼20-nm-lateral and ∼1-nm-vertical length...

  • Giant effective g-factor in PbxEu1-xTe epitaxial films. Heredia, E.; de Oliveira Rappl, P. H.; Motisuke, P.; Gazoto, A. L.; Iikawa, F.; Brasil, M. J. S. P. // Applied Physics Letters;7/21/2008, Vol. 93 Issue 3, p031903 

    We investigated PbxEu1-xTe films with x≤0.2 by magneto-optical measurements. For x∼0.01, the optical emission is similar to high quality EuTe films with two narrow lines attributed to excitonic recombinations associated with magnetic polarons. For increasing x, the emission becomes...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics