Low gap amorphous GaN1-xAsx alloys grown on glass substrate

Yu, K. M.; Novikov, S. V.; Broesler, R.; Liliental-Weber, Z.; Levander, A. X.; Kao, V. M.; Dubon, O. D.; Wu, J.; Walukiewicz, W.; Foxon, C. T.
September 2010
Applied Physics Letters;9/6/2010, Vol. 97 Issue 10, p101906
Academic Journal
Amorphous GaN1-xAsx layers with As content in the range of x=0.1 to 0.6 were grown by molecular beam epitaxy on Pyrex glass substrate. These alloys exhibit a wide range of band gap values from 2.2 to 1.3 eV. We found that the density of the amorphous films is ∼0.8–0.85 of their corresponding crystalline value. These amorphous films have smooth morphology, homogeneous composition, and sharp well defined optical absorption edges. The measured band gap values for the crystalline and amorphous GaN1-xAsx alloys are in excellent agreement with the predictions of the band anticrossing model. The high absorption coefficient of ∼105 cm-1 for the amorphous GaN1-xAsx films suggests that relatively thin films (on the order of 1 μm) are necessary for photovoltaic application.


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