TITLE

The distribution of chemical elements in Al- or La-capped high-κ metal gate stacks

AUTHOR(S)
Bosman, M.; Zhang, Y.; Cheng, C. K.; Li, X.; Wu, X.; Pey, K. L.; Lin, C. T.; Chen, Y. W.; Hsu, S. H.; Hsu, C. H.
PUB. DATE
September 2010
SOURCE
Applied Physics Letters;9/6/2010, Vol. 97 Issue 10, p103504
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The spatial distribution of chemical elements is studied in high-κ, metal-gated stacks applied in field effect transistors. Using the transmission electron microscope (TEM)-based analytical techniques electron energy-loss spectroscopy (EELS) and energy-dispersive x-ray spectroscopy, it is demonstrated that Al2O3 and La2O3 capping layers show distinctly different diffusion profiles. The importance of the EELS collection angle is discussed. Popular chemical distribution models that assume La-rich interface layers are rejected.
ACCESSION #
53507787

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics