Interface layer thickness effect on the photocurrent of Pt sandwiched polycrystalline ferroelectric Pb(Zr,Ti)O3 films

Cao, Dawei; Hui Zhang; Liang Fang; Wen Dong; Fengang Zheng; Shen, Mingrong
September 2010
Applied Physics Letters;9/6/2010, Vol. 97 Issue 10, p102104
Academic Journal
Based on the analysis of the photocurrent behavior of Pt sandwiched Pb(Zr0.2Ti0.8)O3 (PZT) films, the experimental evidence of top Pt/PZT interface layer thickness effect on the photocurrent is reported. It was well established before that the photocurrent of metal/ferroelectric film is attributed to the height of Schottky contact barrier. However, our results suggest that the photocurrent of Pt/PZT interface contact is determined not only by the barrier height but also by the interface layer thickness, namely, by the built-in electrical field at the interface layer. The mechanism behind such photocurrent phenomenon is proposed.


Related Articles

  • N-type behavior of ferroelectric-gate carbon nanotube network transistor. Cheah, Jun Wei; Shi, Yumeng; Ong, Hock Guan; Lee, Chun Wei; Li, Lain-Jong; Wang, Junling // Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p082103 

    Carbon nanotube field effect transistor has attracted much attention recently and is a promising candidate for next generation nanoelectronics. Here, we report our study on a transistor using single wall carbon nanotube network as the channel and a ferroelectric film as the gate dielectric. The...

  • Separation of the Schottky barrier and polarization effects on the photocurrent of Pt sandwiched Pb(Zr0.20Ti0.80)O3 films. Fengang Zheng; Jie Xu; Liang Fang; Mingrong Shen; Xinglong Wu // Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p172101 

    Photoelectric behavior of Pt sandwiched Pb(Zr0.20Ti0.80)TiO3 (PZT) films deposited on Pt/Ti/SiO2/Si substrates by a sol-gel method was investigated by testing the short-circuit photocurrent under different film thicknesses. By poling the films step by step with increased magnitude and alternated...

  • Schottky barrier formation for Fe on GaAs(001) and the role of interfacial structure (abstract). Jonker, B.T.; Kneedler, E.M. // Journal of Applied Physics;4/16/1997, Vol. 81 Issue 8, p4362 

    Presents an abstract of a study on the Schottky barrier formation for Fe on GaAs(001) and the role of interfacial structure. Use of photoreflectance spectroscopy to measure Schottky barrier height formed for Fe films.

  • Built-in voltages and asymmetric polarization switching in Pb(Zr,Ti)O[sub 3] thin film capacitors. Lee, J.; Choi, C. H.; Park, B. H.; Noh, T. W.; Lee, J. K. // Applied Physics Letters;6/22/1998, Vol. 72 Issue 25 

    Asymmetric polarization switching of Pb(Zr,Ti)O[sub 3] (PZT) thin films with different electrode configuration has been studied in (La,Sr)CoO[sub 3]/Pb(Zr,Ti)O[sub 3]/(La,Sr)CoO[sub 3] (LSCO) heterostructures in which the conducting oxide (La,Sr)CoO[sub 3] and/or LaCoO[sub 3] (LCO) have been...

  • Stability of a ferroelectric phase with electrical domains in multilayers. Misirlioglu, I. B. // Applied Physics Letters;4/27/2009, Vol. 94 Issue 17, p172907 

    Multilayer BaTiO3–SrTiO3 and PbTiO3–SrTiO3 structures with different electrical domain states are studied using a Landau–Ginzburg–Devonshire free energy. Polarizations in the layers are computed for multidomain and single-domain states where the...

  • Interface-induced phenomena in polarization response of ferroelectric thin films. Tagantsev, A. K.; Gerra, G. // Journal of Applied Physics;9/1/2006, Vol. 100 Issue 5, p051607 

    This article reviews the existing theoretical models describing the interface-induced phenomena which affect the switching characteristics and dielectric properties of ferroelectric thin films. Three groups of interface-induced effects are addressed—namely,...

  • Electric field induced microstructures in thin films on physicochemically heterogeneous and patterned substrates. Srivastava, Samanvaya; Reddy, P. Dinesh Sankar; Wang, Cindy; Bandyopadhyay, Dipankar; Sharma, Ashutosh // Journal of Chemical Physics;5/7/2010, Vol. 132 Issue 17, p174703 

    We study by nonlinear simulations the electric field induced pattern formation in a thin viscous film resting on a topographically or chemically patterned substrate. The thin film microstructures can be aligned to the substrate patterns within a window of parameters where the spinodal length...

  • Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier. Hanbicki, A. T.; van ’t Erve, O. M. J.; Magno, R.; Kioseoglou, G.; Li, C. H.; Jonker, B. T.; Itskos, G.; Mallory, R.; Yasar, M.; Petrou, A. // Applied Physics Letters;6/9/2003, Vol. 82 Issue 23, p4092 

    Electron-spin polarizations of 32% are obtained in a GaAs quantum well via electrical injection through a reverse-biased Fe/AlGaAs Schottky contact. An analysis of the transport data using the Rowell criteria demonstrates that single-step tunneling is the dominant transport mechanism. The...

  • Comment on “Influence of crystal polarity on the properties of Pt/GaN Schottky diodes” [Appl. Phys. Lett. 77, 2012 (2000)]. Rizzi, Angela; Lu¨th, Hans // Applied Physics Letters;1/21/2002, Vol. 80 Issue 3, p530 

    Comments on the influence of crystal polarity on the electronic properties of Schottky diodes. Criticism on the different screening behavior of internal polarization charges; Analysis on the fundamental errors of interpretation of different band bending; Determination of Schottky-barrier...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics