TITLE

A low-temperature crystallization path for device-quality ferroelectric films

AUTHOR(S)
Jinwang Li; Kameda, Hiroyuki; Trinh, Bui Nguyen Quoc; Miyasako, Takaaki; Tue, Phan Trong; Tokumitsu, Eisuke; Mitani, Tadaoki; Shimoda, Tatsuya
PUB. DATE
September 2010
SOURCE
Applied Physics Letters;9/6/2010, Vol. 97 Issue 10, p102905
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We show a path for low-temperature crystallization of device-quality solution-processed lead zirconate titanate films. The essential aspect of the path is to circumvent pyrochlore formation at around 300 °C during temperature increase up to 400 °C. By maintaining enough carbon via pyrolysis at 210 °C, well below the temperature for pyrochlore formation, Pb2+ can be reduced to Pb0. This leads to the lack of Pb2+ in the film to suppress the development of pyrochlore, which accounts for the usual high-temperature conversion to perovskite. Films on metal, metal/oxide hybrid, and oxide bottom electrodes were successfully crystallized at 400–450 °C.
ACCESSION #
53507773

 

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