TITLE

Vertical polyelectrolyte-gated organic field-effect transistors

AUTHOR(S)
Liu, J.; Herlogsson, L.; Sawatdee, A.; Favia, P.; Sandberg, M.; Crispin, X.; Engquist, I.; Berggren, M.
PUB. DATE
September 2010
SOURCE
Applied Physics Letters;9/6/2010, Vol. 97 Issue 10, p103303
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Short-channel, vertically structured organic transistors with a polyelectrolyte as gate insulator are demonstrated. The devices are fabricated using low-resolution, self-aligned, and mask-free photolithography. Owing to the use of a polyelectrolyte, our vertical electrolyte-gated organic field-effect transistors (VEGOFETs), with channel lengths of 2.2 and 0.7 μm, operate at voltages below one volt. The VEGOFETs show clear saturation and switch on and off in 200 μs. A vertical geometry to achieve short-transistor channels and the use of an electrolyte makes these transistors promising candidates for printed logics and drivers with low operating voltage.
ACCESSION #
53507770

 

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