Electron spin resonance of Zn1-xMgxO thin films grown by plasma-assisted molecular beam epitaxy

Wassner, T. A.; Laumer, B.; Althammer, M.; Goennenwein, S. T. B.; Stutzmann, M.; Eickhoff, M.; Brandt, M. S.
August 2010
Applied Physics Letters;8/30/2010, Vol. 97 Issue 9, p092102
Academic Journal
Zn1-xMgxO thin films with a Mg content x between 0 and 0.42 grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates were investigated by electron spin resonance at 5 K. Above band gap illumination induces a persistent resonance signal, which is attributed to free conduction band electrons. The g-factors of the Zn1-xMgxO epitaxial layers and their anisotropy were determined experimentally and an increase from g∥=1.957 for x=0 to g∥=1.970 for x=0.42 was found, accompanied by a decrease in anisotropy. A comparison with g-factors of the AlxGa1-xN system is also given.


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