TITLE

Are Al2O3 and MgO tunnel barriers suitable for spin injection in graphene?

AUTHOR(S)
Dlubak, B.; Seneor, P.; Anane, A.; Barraud, C.; Deranlot, C.; Deneuve, D.; Servet, B.; Mattana, R.; Petroff, F.; Fert, A.
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/30/2010, Vol. 97 Issue 9, p092502
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the structural impact on graphene and multi-layers graphene of the growth by sputtering of tunnel barriers. Sputtered Al2O3 and MgO barriers were chosen for their well-known efficiency as spin injectors in spintronics devices. The impact of the growth on the structure of graphene and up to 4-layer flakes was analyzed by Raman spectroscopy. This study reveals that for Al2O3 growth, the impact is moderate for a monolayer and decreases sharply for bilayers and above. In the case of MgO all the flakes underwent a strong amorphization. Moreover, this reveals that while single layer graphene is believed to offer the best spin transport properties, the better robustness of multilayer graphene may ultimately make it a better choice for spintronics devices.
ACCESSION #
53421666

 

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