Abrupt resistivity decrease and other unexpected phenomena in a doped amorphous ternary metal oxide

Sun, Jian; Gong, Hao
August 2010
Applied Physics Letters;8/30/2010, Vol. 97 Issue 9, p092106
Academic Journal
The phenomenon of insulator-metal transition introduced in amorphous binary gallium oxide as discussed by Nagarajan et al. [Nature Mater. 7, 391 (2008)] is demonstrated to be also achievable in an amorphous ternary metal oxide system. The annealing method used in amorphous binary gallium oxide is not applicable to the ternary system. A different approach, aluminum incorporation in amorphous indium zinc oxide (IZO), is adopted in achieving insulator-metal transition or sharp resistance decrease in the amorphous ternary oxide. In addition to sharp resistance decrease, some other unexpected phenomena, such as different partial crystallization, are also reported.


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