TITLE

Minority carrier lifetime in silicon wafers from quasi-steady-state photoluminescence

AUTHOR(S)
Giesecke, J. A.; Schubert, M. C.; Walter, D.; Warta, W.
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/30/2010, Vol. 97 Issue 9, p092109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Based on quasi-steady-state photoluminescence, we present an approach to extract minority carrier lifetime from silicon wafers without a priori information about any material parameter (e.g., dopant concentration or mobility). A sinusoidal oscillation of irradiation of a silicon sample in time stimulates a likewise oscillating excess carrier density. Our approach is based on the fact that—in the quasi-steady-state regime—the time shift between the maxima of irradiation intensity and the intensity of radiative recombination is linked to effective minority carrier lifetime. Exploiting the continuity equation, it is possible to determine injection dependent minority carrier lifetime from there.
ACCESSION #
53421657

 

Related Articles

  • Photoluminescence of Porous Silicon Layers Formed in Ion-Implanted Silicon Wafers. Piryatinskiı, Yu. P.; Klyuı, N. I.; Rozhin, A. G. // Technical Physics Letters;Nov2000, Vol. 26 Issue 11, p944 

    Implantation of the B[sup +] and N[sup +] ions or a B[sup +] + N[sup +] combination into silicon substrates affects the photoluminescence properties of porous silicon (por-Si) layers prepared on the ion-modified wafers. The post-implantation anneals lead to significant changes in the por-Si...

  • Blue Light Emitting Silicon Nanocrystals Prepared by Laser Ablation of Doped Si Wafers in Water. Svrcek, Vladimir; Kondo, Michio // Journal of Laser Micro / Nanoengineering;2010, Vol. 5 Issue 2, p103 

    The water-confinement of nanosecond-pulsed laser generated plasma provides great potential for preparation of ambient-stable silicon nanocrystals (Si-ncs) with quantum confinement size effect. Here, we report on blue-luminescent Si-ncs prepared by nanosecond KrF excimer laser ablation of...

  • Special Features of Recombination of Nonequilibrium Charge Carriers in Porous Silicon with Different Nanostructure Morphologies. Lisachenko, M. G.; Konstantinov, E. A.; Timoshenko, V. Yu.; Kashkarov, P. K. // Semiconductors;Mar2002, Vol. 36 Issue 3, p325 

    Photoluminescence of porous silicon with different nanostructure morphologies and silicon monocrystalline wafers used as substrates was studied comparatively. The photoluminescence intensity of mesoporous and nanoporous silicon was established to be related to the excitation intensity by the...

  • Contactless determination of the carrier mobility sum in silicon wafers using combined photoluminescence and photoconductance measurements. Hameiri, Ziv; Rougieux, Fiacre; Sinton, Ron; Trupke, Thorsten // Applied Physics Letters;2/17/2014, Vol. 104 Issue 7, p073506-1 

    A contactless method to determine the carrier mobility sum in silicon wafers, based on a comparison between photoluminescence and photoconductance measurements is presented. The method is applied to monocrystalline silicon wafers and the results are found to be in good agreement with...

  • Aspects of Iron Contamination Studies in Silicon by Photoluminescence Correlation to Other Techniques. Rapoport, I.; Taylor, P.; Orschel, B.; Kearns, J.; Kirscht, F.; Buczkowski, A.; Hummel, S. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p103 

    Photoluminescence (PL) studies were applied to intentionally iron contaminated silicon wafers to validate the PL technique for the quantitative evaluation of bulk iron in silicon. Iron contamination ranged from 109 cm-3 to 1012 cm-3. For lightly doped p-type and n-type silicon a good correlation...

  • Photoluminescence Study on the Preparation of Silicon Quantum Dots Nanoparticles. Yusop, S. F. M.; Rafaie, H. A.; Amizam, S.; Abdullah, S.; Rusop, M. // AIP Conference Proceedings;6/1/2009, Vol. 1136 Issue 1, p656 

    The structural study of silicon quantum dots nanoparticles (SQDNs) is a gateway to enormous array of application and new technologies in nowadays such as laser diode (LD) and biological detector. In this research we focus on the photoluminescence study on the Porous Silicon during the...

  • Optical properties of excimer laser nanostructured silicon wafer. Kumar, Prashant; Krishna, M. Ghanashyam; Bhattacharya, A. K. // AIP Conference Proceedings;6/29/2009, Vol. 1147 Issue 1, p244 

    KrF excimer laser nanostructuring of [311] single crystal silicon surface is reported for laser fluence above ablation threshold for silicon. Laser irradiation of silicon surface gives rise to growth of nano-sized grains. Cooling time between the shots is an important factor in determining the...

  • Photoluminescence of Si0.9Ge0.1O2 and GeO2 Films Irradiated with Silicon Ions. Gorshkov, O. N.; Dudin, Yu. A.; Kamin, V. A.; Kasatkin, A. P.; Mikhaylov, A. N.; Novikov, V. A.; Tetelbaum, D. I. // Technical Physics Letters;Jun2005, Vol. 31 Issue 6, p509 

    We have studied the photoluminescence (PL) of GeO2 and 90 mol % SiO2–10 mol % GeO2 films synthesized by method of RF magnetron sputtering and then irradiated with silicon ions and annealed. The PL of silicon-implanted GeO2 films, related to the presence of Si nanocrystals (nc-Si), was...

  • Photoluminescence properties of porous silicon layers prepared by electrochemical etching in extremely dilute HF solutions. Koyama, Hideki // Journal of Applied Electrochemistry;Sep2006, Vol. 36 Issue 9, p999 

    Dilute HF solutions with concentrations down to 0.03% have been used to obtain luminescent porous silicon (PSi) layers on p-type Si wafers. The experimental results show that with a constant etching time of 30 min, PSi layers with sufficient luminescence efficiencies can be formed for HF...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics