TITLE

Raman scattering on intrinsic surface electron accumulation of InN nanowires

AUTHOR(S)
Jeganathan, K.; Purushothaman, V.; Debnath, R. K.; Calarco, R.; Luth, H.
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/30/2010, Vol. 97 Issue 9, p093104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An intrinsic property of vertically aligned InN nanowire (NW) ensembles have been investigated by analysis of coupled longitudinal optical (LO) phonon mode using μ-Raman scattering. Spectra were recorded in backscattering geometries in parallel and perpendicular to the axis of the NWs. The width of surface accumulation layer is estimated from the LO phonon peak intensity ratios. The carrier concentration is extracted to be 6.7×1016 cm-3. The pronounced peak at 627.2 cm-1 is related to the interaction of phonons with surface electrons. The surface charge density, Nsc is calculated to be ∼2.55×1013 cm-2 which provides surface accumulation field strength of 5.5 Mv/cm.
ACCESSION #
53421651

 

Related Articles

  • Optical phonons in the bulk and on the surface of ZnO and ZnTe/ZnO nanowires in Raman spectra. Vinogradov, V.; Dzhagan, V.; Zavaritskaya, T.; Kucherenko, I.; Mel'nik, N.; Novikova, N.; Janik, E.; Wojtowicz, T.; Plyashechnik, O.; Zahn, D. // Physics of the Solid State;Oct2012, Vol. 54 Issue 10, p2083 

    Raman spectra of ZnO and core-shell ZnTe/ZnO nanowires have been measured under conditions of nonresonant and resonant excitations by Ar and He-Cd lasers. The optical vibration frequencies that are characteristic of the wurtzite structure of ZnO crystals have been determined. The Raman-active...

  • Temperature dependence of the A1(LO) and E2 (high) phonons in hexagonal InN nanowires. Song, B.; Jian, J. K.; Wang, G.; Bao, H. Q.; Chen, X. L. // Journal of Applied Physics;6/15/2007, Vol. 101 Issue 12, p124302 

    The frequencies and dampings of the zone-center optical phonon modes of A1(LO) (longitudinal-optical) and E2 (high) in wurtzite InN nanowires have been investigated by micro-Raman scattering in the temperature range from 80 to 300 K. Our results reveal that the phonon frequencies decrease and...

  • Raman scattering and hot luminescence spectra of Zn1 − xMn xTe quantum wires. Vinogradov, V. S.; Zavaritskaya, T. N.; Karczewski, G.; Kucherenko, I. V.; Mel'nik, N. N.; Zaleszczyk, W. // Physics of the Solid State;Aug2010, Vol. 52 Issue 8, p1757 

    The Raman scattering and luminescence spectra of Zn1 − xMn xTe (0 ≤ x ≤ 0.6) quantum wires have been investigated. The quantum wires have been grown by molecular-beam epitaxy on the (100)GaAs substrate with Au used as a catalyst. The spectrum of optical phonons in ZnMnTe...

  • Phonon confinement in oxide-coated silicon nanowires. Bhattacharyya, Somnath; Samui, Saumyadip // Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1564 

    Raman spectroscopy of micron-long crystalline Si nanowires covered with a thick SiO[sub 2] layer showed a downshift and asymmetric broadening of the Raman first order TO phonon peak when compared with the bulk (q=0) mode. The Raman shift and broadening were attributed to phonon confinement in...

  • Evolution of optical phonons in CdS nanowires, nanobelts, and nanosheets. Lee, Kyoung-Yeon; Lim, Jung-Ran; Rho, Heesuk; Choi, Young-Jin; Choi, Kyoung Jin; Park, Jae-Gwan // Applied Physics Letters;11/12/2007, Vol. 91 Issue 20, p201901 

    We report Raman scattering from single and ensemble CdS nanowires, nanobelts, and nanosheets. The Raman spectra of nanobelts and nanosheets are notably different from those of nanowires, exhibiting a strong enhancement of the multiphonon response. Moreover, the first-order longitudinal optical...

  • Study of phonon modes in germanium nanowires. Wang, Xi; Shakouri, Ali; Yu, Bin; Sun, Xuhui; Meyyappan, Meyya // Journal of Applied Physics;7/1/2007, Vol. 102 Issue 1, p014304 

    The observation of pure phonon confinement effect in germanium nanowires is limited due to the illumination sensitivity of Raman spectra. In this paper we measured Raman spectra for different size germanium nanowires with different excitation laser powers and wavelengths. By eliminating the...

  • Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness. Angelova, T.; Cros, A.; Cantarero, A.; Fuster, D.; González, Y.; González, L. // Journal of Applied Physics;Aug2008, Vol. 104 Issue 3, p033523 

    Self-assembled InAs/InP (001) quantum wire stacks have been investigated by means of Raman scattering. The characteristics of the observed vibrational modes show clear evidence of confinement and atomic intermixing between As and P atoms from the wire and the spacer. The change in the...

  • Raman Spectroscopy of Silicon Nanowires: Phonon Confinement and Anharmonic Phonon Processes. Ferrari, A. C.; Piscanec, S.; Hofmann, S.; Cantoro, M.; Ducati, C.; Robertson, J. // AIP Conference Proceedings;2003, Vol. 685 Issue 1, p507 

    We calculate the effects of phonon confinement on the Raman spectra of Silicon nanowires. The theoretical predictions are checked by measuring the Raman spectra of SiNWs selectively grown by plasma enhanced chemical vapor deposition (PECVD) employing gold as a catalyst. In order to fully account...

  • Temperature response and anharmonicity of the optical phonons in GaN nanowires. Xiang-Bai Chen; Huso, Jesse; Morrison, John L.; Bergman, Leah; Purdy, Andrew P. // Journal of Applied Physics;7/15/2005, Vol. 98 Issue 2, p026106 

    Anharmonic decay mechanisms of longitudinal-optical (LO) phonons in wurtzite-structured GaN nanowires were studied by temperature-dependent Raman scattering at the temperature range of 77–900 K. It was found that with increasing temperature, the LO-phonon linewidth increases and the Raman...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics