Growth of monolayer graphene on 8° off-axis 4H–SiC (000–1) substrates with application to quantum transport devices

Camara, N.; Jouault, B.; Caboni, A.; Jabakhanji, B.; Desrat, W.; Pausas, E.; Consejo, C.; Mestres, N.; Godignon, P.; Camassel, J.
August 2010
Applied Physics Letters;8/30/2010, Vol. 97 Issue 9, p093107
Academic Journal
Using high temperature annealing conditions with a graphite cap covering the C-face of an 8° off-axis 4H–SiC sample, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magnetotransport measurements. We find a moderate p-type doping, high carrier mobility, and half integer quantum Hall effect typical of high quality graphene samples. This opens the way to a fully compatible integration of graphene with SiC devices on the wafers that constitute the standard in today’s SiC industry.


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