PO2 dependant resistance switch effect in highly epitaxial (LaBa)Co2O5+δ thin films

Liu, Jian; Collins, Gregory; Liu, Ming; Chen, C. L.; Jiang, Jiechao; Meletis, Efsftathios I.; Zhang, Qingyu; Dong, Chuang
August 2010
Applied Physics Letters;8/30/2010, Vol. 97 Issue 9, p094101
Academic Journal
Giant resistance switching behavior in mixed conductive (LaBa)Co2O5+δ epitaxial thin film were discovered in high temperature and reducing environments during the reduction and reoxidation process. A reproducible resistance response of over 99% was achieved in the films during a change of 4% H2/96% N2 to oxygen at temperature range of 400–780 °C. The results indicate that at, low oxygen partial pressure, the extension of oxygen deficiency is an essential factor to the high temperature physical properties of (LaBa)Co2O5+δ and demonstrates its potential application as a chemical sensor device for reducing environments at high temperature.


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