Light-hole and heavy-hole transitions for high-temperature long-wavelength infrared detection

Lao, Y. F.; Pitigala, P. K. D. D. P.; Perera, A. G. U.; Liu, H. C.; Buchanan, M.; Wasilewski, Z. R.; Choi, K. K.; Wijewarnasuriya, P.
August 2010
Applied Physics Letters;8/30/2010, Vol. 97 Issue 9, p091104
Academic Journal
Hole transitions from the heavy-hole (hh) to the light-hole (lh) band contributing to the 4–10 μm response range are reported on p-GaAs/AlGaAs detectors. The detectors show a spectral response up to 16.5 μm, operating up to a temperature of 330 K where the lh-hh response is superimposed on the free-carrier response. Two characteristic peaks observed between 5–7 μm are in good agreement with corresponding energy separations of the lh and hh bands and thus originated from lh-hh transitions. Results will be useful for designing multi-spectral detection which could be realized on a single p-GaAs structure.


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