Bimodel onset strain relaxation in InAs quantum dots with an InGaAs capping layer

Chen, J. F.; Chen, Ross C. C.; Chiang, C. H.; Chen, Y. F.; Wu, Y. H.; Chang, L.
August 2010
Applied Physics Letters;8/30/2010, Vol. 97 Issue 9, p092110
Academic Journal
Capping InAs quantum dots (QDs) with an InGaAs layer allows strain relaxation to induce a low-energy electron state below a set of fine dot family states, which is consistent with photoluminescence (PL) spectra. The evolution of InAs thickness suggests a bimodal onset relaxation, i.e., a fine dot family that is strain-relieved by indium outdiffusion from the QDs, as suggested by transmission electron microscopy, and a low-energy dot family that is strain relaxed by the generation of lattice misfits. The indium outdiffusion can explain an abnormal PL blueshift in 70 meV in the fine dot family at onset of strain relaxation.


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