Coevaporation of Cu2ZnSnSe4 thin films

Redinger, Alex; Siebentritt, Susanne
August 2010
Applied Physics Letters;8/30/2010, Vol. 97 Issue 9, p092111
Academic Journal
Cu2ZnSnSe4 thin films grown by coevaporation are investigated in a wide temperature range and for different Se partial pressures during growth. At temperatures higher than 350 °C Sn is re-evaporating as SnSe from the surface whereas Zn is lost at temperatures higher than 430 °C. Moreover the Se partial pressure dramatically changes the Zn and Sn concentrations in the resulting film. Interrupted processes at 380 °C show that single-stage coevaporation intrinsically induces a secondary phase at the substrate/film interface.


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