TITLE

Raman scattering determination of the energy difference between Γ and L conduction band minima in Ga1-xInxAsySb1-y

AUTHOR(S)
Cuscó, R.; Ibáñez, J.; Artús, L.
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/30/2010, Vol. 97 Issue 9, p091909
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report a Raman scattering determination of the energy difference EΓ-L between the Γ conduction-band minimum and the L valley minima in n-type Ga1-xInxAsySb1-y lattice matched to GaSb (x=0.15, y=0.13). A frequency downshift in the L+ phonon–plasmon coupled mode is observed between 80 K and room temperature that is attributed to electron transfer from the Γ to the L valleys. We use the L+ frequency shift to evaluate EΓ-L by performing Lindhard–Mermin L+ line-shape fits for different EΓ-L values. The EΓ-L value increases with electron concentration due to band gap renormalization. A value EΓ-L=154 meV is derived for intrinsic material.
ACCESSION #
53421620

 

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