Raman scattering determination of the energy difference between Γ and L conduction band minima in Ga1-xInxAsySb1-y

Cuscó, R.; Ibáñez, J.; Artús, L.
August 2010
Applied Physics Letters;8/30/2010, Vol. 97 Issue 9, p091909
Academic Journal
We report a Raman scattering determination of the energy difference EΓ-L between the Γ conduction-band minimum and the L valley minima in n-type Ga1-xInxAsySb1-y lattice matched to GaSb (x=0.15, y=0.13). A frequency downshift in the L+ phonon–plasmon coupled mode is observed between 80 K and room temperature that is attributed to electron transfer from the Γ to the L valleys. We use the L+ frequency shift to evaluate EΓ-L by performing Lindhard–Mermin L+ line-shape fits for different EΓ-L values. The EΓ-L value increases with electron concentration due to band gap renormalization. A value EΓ-L=154 meV is derived for intrinsic material.


Related Articles

  • Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors. Cuscó, R.; Artús, L.; Ibán˜ez, J.; Blanco, N.; González-Díaz, G.; Rahman, M.; Long, A. R. // Journal of Applied Physics;12/1/2000, Vol. 88 Issue 11, p6567 

    We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of the Shubnikov-de Haas oscillations. The...

  • Micro-Raman characterization of the electronic properties of Si-doped GaAs layers grown on.... Gerster, J.; Schneider, J.M. // Applied Physics Letters;1/6/1997, Vol. 70 Issue 1, p69 

    Investigates the coupled modes of plasmons and LO phonons appearing in the Raman spectra of highly doped gallium arsenide layers. Examination of the local incorporation character of silicon on different crystal facets; Utilization of molecular beam epitaxy in growing silicon-doped gallium...

  • Phonon plasmon interaction in ternary group-III-nitrides. Kirste, Ronny; Mohn, Stefan; Wagner, Markus R.; Reparaz, Juan S.; Hoffmann, Axel // Applied Physics Letters;7/23/2012, Vol. 101 Issue 4, p041909 

    Phonon-plasmon-coupling in the ternary group-III-nitrides InGaN and AlGaN is investigated experimentally and theoretically. Based on the observation of broadening and shifting of the A1(LO) mode in AlGaN upon Si-doping, a lineshape analysis was performed to determine the carrier concentration....

  • Raman scattering from phonon-plasmon modes in Ga1-xAlxAs. Becker, R. J.; Luehrmann, P. F.; Langer, D. W. // Applied Physics Letters;9/1/1985, Vol. 47 Issue 5, p513 

    The relation for the frequencies of phonon-plasmon modes in two-component solutions is presented. Raman spectra from over 80 samples of Ga1-xAlxAs over a wide range of x values and varying electron concentrations have been fitted to predicted curves using this relationship. Data were taken at...

  • Observation of plasmons coupled with optical phonons in n-AlxGa1-xAs by Raman scattering. Yuasa, T.; Naritsuka, S.; Mannoh, M.; Shinozaki, K.; Yamanaka, K.; Nomura, Y.; Mihara, M.; Ishii, M. // Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p176 

    Raman scattering from Si-doped n-AlxGa1-xAs (x=0.25) grown by molecular beam epitaxy has been studied at room temperature. In addition to the optical phonon lines, three new Raman lines have been clearly observed in samples with high carrier concentrations (n>=1×1018 cm-3). These lines are...

  • Raman scattering by coupled plasmon-phonon modes in n-type Ga1-xAlxAs epitaxial layers. Kirillov, D.; Chai, Y.; Webb, C.; Davis, G. // Journal of Applied Physics;1/1/1986, Vol. 59 Issue 1, p231 

    Presents a study which examined Raman scattering by coupled plasmon-phonon modes in galium[sub0.75]aluminum[sub0.25]arsenic epitaxial layers grown by molecular beam epitaxy and metalorganic vapor deposition. Examination of the dependence of plasmon-phonon frequency on the concentration of free...

  • Phonon�Plasmon Interaction in Tunneling GaAs/AlAs Superlattices. Volodin, V. A.; Efremov, M. D.; Preobrazhenskii, V. V.; Semyagin, B. R.; Bolotov, V. V.; Sachkov, V. A.; Galaktionov, E. A.; Kretinin, A. V. // JETP Letters;6/10/2000, Vol. 71 Issue 11, p477 

    The phonon�plasmon interaction in tunneling GaAs[sub n]/AlAs[sub m] superlattices (m = 5 and 6=n=0.6 monolayers) was studied by Raman scattering spectroscopy. The interaction of optical phonons localized in GaAs and AlAs layers with quasi-three-dimensional plasmons strengthens as the...

  • Raman scattering study of carrier activation in zinc- and silicon-implanted and pulse-laser-annealed GaAs. Ashokan, R.; Jain, K. P. // Journal of Applied Physics;3/15/1989, Vol. 65 Issue 6, p2209 

    Reports the plasmon-LO-phonon coupled modes observed in the Raman spectra of carrier activation in zinc and silicon-implanted and pulse-laser-annealed gallium arsenide. Interaction between LO phonon and free carriers; Wavelength dependence of the threshold power density for the best carrier...

  • Raman scattering of coupled longitudinal optical phonon-plasmon modes in dry etched n+-GaAs. Wang, P. D.; Foad, M. A.; Sotomayor-Torres, C. M.; Thoms, S.; Watt, M.; Cheung, R.; Wilkinson, C. D. W.; Beaumont, S. P. // Journal of Applied Physics;4/15/1992, Vol. 71 Issue 8, p3754 

    Reports on Raman investigations of the coupled longitudinal optical phonon-plasmon scattering on heavily doped n[sup+]-GaAs. Background to the study; Theoretical considerations; Details of the dry etching and experimental technique; Results and discussion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics