Orientation-dependent charge carrier confinement in a nanopatterned silicon film

Liu, Zheng; Duan, Wenhui; Gu, Bing-Lin; Wu, Jian
August 2010
Applied Physics Letters;8/30/2010, Vol. 97 Issue 9, p092116
Academic Journal
From first-principles calculations, we find that in a (110) Si film with surface etching along the [001] direction, the holes can be confined underneath the patterned layer. This effect arises from the interplay between the anisotropic carriers and the patterning-induced quantum confinement. An anisotropy coefficient K=mz/my, which is the ratio between the out-of-plane effective mass and the in-plane effective mass of the charge carriers in the film, is introduced to explain the orientation dependence. We propose that a modulation-dopinglike effect can be achieved in the (110) nanopatterned Si film by selective doping in the top patterned layer.


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