TITLE

High power terahertz emission from a single gate AlGaN/GaN field effect transistor with periodic Ohmic contacts for plasmon coupling

AUTHOR(S)
Onishi, Toshikazu; Tanigawa, Tatsuya; Takigawa, Shinichi
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/30/2010, Vol. 97 Issue 9, p092117
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on room temperature terahertz (THz) emission by a single, short gate AlGaN/GaN field effect transistor with grating Ohmic contacts. The fingers of metal contacts are fabricated at the nanoscale in length and spacing in order to work as a radiation coupler of electron plasmons in the THz range. Spectrum analysis revealed a broadband emission centered at 1.5 THz with a controlled polarization by the grating contacts. The measured output power is linearly increased with the drain input power and reached up to 1.8 μW.
ACCESSION #
53421614

 

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