TITLE

Tuning single GaAs quantum dots in resonance with a rubidium vapor

AUTHOR(S)
Akopian, N.; Perinetti, U.; Wang, L.; Rastelli, A.; Schmidt, O. G.; Zwiller, V.
PUB. DATE
August 2010
SOURCE
Applied Physics Letters;8/23/2010, Vol. 97 Issue 8, p082103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We study single GaAs quantum dots with optical transitions that can be brought into resonance with the widely used D2 transitions of rubidium atoms. We achieve resonance by Zeeman or Stark shifting the quantum dot levels. We discuss an energy stabilization scheme based on the absorption of quantum dot photoluminescence in a rubidium vapor. This offers a scalable means to counteract slow spectral diffusion in quantum dots.
ACCESSION #
53421596

 

Related Articles

  • Observation of the Kondo Effect in a Spin-3/2 Hole Quantum Dot. Klochan, O.; Micolich, A. P.; Hamilton, A. R.; Trunov, K.; Reuter, D.; Wieck, A. D. // AIP Conference Proceedings;Dec2013, Vol. 1566 Issue 1, p351 

    We report the observation of the Kondo effect in a spin- 3/2 hole quantum dot formed near pinch-off in a GaAs quantum wire. We clearly observe two distinctive hallmarks of quantum dot Kondo physics. First, the zero-bias peak in the differential conductance splits an in-plane magnetic field and...

  • Zeeman Effect for Holes in a Ge/Si System with Quantum Dots. Nenashev, A. V.; Dvurechenskiı, A. V.; Zinov’eva, A. F. // Journal of Experimental & Theoretical Physics;Feb2003, Vol. 96 Issue 2, p321 

    The tight binding approximation is employed to study the Zeeman effect for the hole ground state in a quantum dot. A method is proposed for calculating the g factor for localized states in a quantum dot. This method can be used both for hole states and for electron states. Calculations made for...

  • Luminescence enhancement from hydrogen-passivated self-assembled quantum dots. Le Ru, E. C.; Le Ru, E.C.; Siverns, P. D.; Siverns, P.D.; Murray, R. // Applied Physics Letters;10/16/2000, Vol. 77 Issue 16 

    We have measured a large increase (by a factor of up to 50) in the room-temperature emission of InAs/GaAs self-assembled quantum dots subjected to a hydrogen-passivation treatment. Smaller enhancements were measured at low temperatures. We tentatively attribute the improved optical signal to...

  • Site-controlled InAs single quantum-dot structures on GaAs surfaces patterned by in situ electron-beam lithography. Ishikawa, Tomonori; Nishimura, Tetsuya; Kohmoto, Shigeru; Asakawa, Kiyoshi // Applied Physics Letters;1/10/2000, Vol. 76 Issue 2, p167 

    We studied a site-control technique for InAs quantum dots (QDs) on GaAs substrates using a combination of in situ electron-beam (EB) lithography and self-organized molecular-beam epitaxy. In small, shallow holes formed on prepatterned mesa structures by EB writing and Cl[sub 2] gas etching, QDs...

  • A narrow photoluminescence linewidth of 21 meV at 1.35 mum from strain-reduced InAs quantum dots... Nishi, Kenichi; Saito, Hideaki; Sugou, Shigeo; Jeong-Sik Lee // Applied Physics Letters;2/22/1999, Vol. 74 Issue 8, p1111 

    Reports that InAs quantum dots with size fluctuations were grown on GaAs using the self-assembling method. Comparison of the devices' performance with that of quantum wells; Reduction of the photoluminescence linewidth.

  • Spectral engineering of carrier dynamics in In(Ga)As self-assembled quantum dots. Boggess, Thomas F.; Zhang, L.; Deppe, D. G.; Huffaker, D. L.; Cao, C. // Applied Physics Letters;1/15/2001, Vol. 78 Issue 3, p276 

    Time-resolved photoluminescence upconversion with 200 fs resolution is used to investigate the carrier capture, energy relaxation, and radiative recombination in two self-assembled quantum-dot ensembles with distinctly different sizes and energy spectra. When carriers are excited into the...

  • Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots. Xu, S. J.; Wang, X. C.; Chua, S. J.; Wang, C. H.; Fan, W. J.; Jiang, J.; Xie, X. G. // Applied Physics Letters;6/22/1998, Vol. 72 Issue 25 

    Postgrowth rapid thermal annealing was used to modify the structural and optical properties of the self-assembled InAs quantum dots grown on GaAs substrates by molecular beam epitaxy. It is found that significant narrowing of the luminescence linewidth (from 78.9 to 20.5 meV) from the InAs dot...

  • Independent manipulation of density and size of stress-driven self-assembled quantum dots. Mukhametzhanov, I.; Heitz, R.; Zeng, J.; Chen, P.; Madhukar, A. // Applied Physics Letters;9/28/1998, Vol. 73 Issue 13 

    A method to independently manipulate the density and size of stress-driven self-assembled quantum dots (QDs) is demonstrated in the InAs/GaAs material system. In bilayer stacks, different InAs deposition amounts in the initial (seed) and second layer are shown to enable independent control,...

  • Shape of InAs quantum dots grown on the GaAs (1¯1¯3¯) B surface. Suzuki, T.; Temko, Y.; Jacobi, K. // Applied Physics Letters;6/24/2002, Vol. 80 Issue 25, p4744 

    Self-organized InAs quantum dots were grown by molecular-beam epitaxy on the GaAs (&1macr;&1macr;&3macr;) B surface. Atomically-resolved scanning tunneling microscopy images were acquired in situ. Each quantum dot grows with the same orientation relative to the substrate, with mirror symmetry to...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics